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PDF IXFT80N20Q Data sheet ( Hoja de datos )
| Número de pieza | IXFT80N20Q | |
| Descripción | Power MOSFETs Q-Class | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
IXFH 80N20Q
IXFK 80N20Q
IXFT 80N20Q
VDSS = 200 V
ID25 = 80 A
=RDS(on) 28 mW
trr £ 200 ns
Preliminary data sheet
Symbol
VDSS
VDGR
VGS
VGSM
I
D25
IDM
I
AR
EAR
EAS
dv/dt
P
D
TJ
T
JM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
I
DSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
T
C
= 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-264
TO-247
TO-264
TO-268
Maximum Ratings
200 V
200 V
±20 V
±30 V
80 A
320 A
80 A
45 mJ
1.5 J
5 V/ns
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G
S
TO-264 AA (IXFK)
(TAB)
(TAB)
360 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
6g
10 g
4g
G
D
S
G = Gate
S = Source
D (TAB)
TAB = Drain
Features
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 uA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
V =V
DS DSS
VGS = 0 V
T=
J
25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
200
2.0
V
4.0 V
±100 nA
25 mA
1 mA
28 mW
• Low gate charge
• International standard packages
• EpoxymeetUL94V-0, flammability
classification
• Low R HDMOSTM process
DS (on)
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98605A (6/99)
1-2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFT80N20Q.PDF ] | |
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