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PDF IXFK72N20 Data sheet ( Hoja de datos )
| Número de pieza | IXFK72N20 | |
| Descripción | Power MOSFETs | |
| Fabricantes | IXYS | |
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HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Preliminary data
www.DataSheet4U.com
IXFK72N20
IXFK80N20
V
DSS
I
D25
200 V 72 A
200 V 80 A
trr £ 200 ns
R
DS(on)
35 mW
30 mW
Symbol
VDSS
VDGR
VGS
VGSM
I
D25
IDM
IAR
E
AR
dv/dt
PD
TJ
TJM
Tstg
T
L
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Maximum Ratings TO-264 AA
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
T
C
= 25°C
72N20
80N20
TC = 25°C,
pulse width limited by TJM
TC = 25°C
72N20
80N20
T
C
= 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
T
J
£
150°C,
R
G
=
2
W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
200
200
±20
±30
72
80
288
320
74
45
5
360
-55 ... +150
150
-55 ... +150
300 -
0.9/6
10
V
V
V
V
A
A
A
A
A
mJ
V/ns
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
W
°C
°C
°C
°C
Nm/lb.in.
g
Features
• International standard packages
• Molding epoxies meet UL 94V-0
flammability classification
• Low RDS (on) HDMOSTM process
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic rectifier
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
VGS = 10 V,ID = 0.5 • ID25
72N20
80N20
Pulse test, t £ 300 ms, duty cycle d £ 2 %
200
2
V
4V
±100 nA
200 mA
1 mA
35 mW
30 mW
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97523C (07/00)
1-4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFK72N20.PDF ] | |
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