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IXTP1R6N50PのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。 |
部品番号 | IXTP1R6N50P |
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部品説明 | Power MOSFET ( Transistor ) | ||
メーカ | IXYS | ||
ロゴ | |||
このページの下部にプレビューとIXTP1R6N50Pダウンロード(pdfファイル)リンクがあります。 Total 4 pages
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Advance Technical Information
www.DataSheet4U.com
IXTP 1R6N50P
IXTY 1R6N50P
VDSS =
ID25 =
RDS(on) ≤
500
1.6
6.5
V
A
Ω
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 50 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10s
Maximum tab temperature for soldering
TO-252 package for 10s
Mounting torque (TO-220)
TO-252
TO-220
Maximum Ratings
500 V
500 V
±30 V
±40 V
1.6 A
2.5 A
1.6 A
5 mJ
75 mJ
TO-252 (IXTY)
TO-220 (IXTP)
G
S
TAB
(TAB)
10
43
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
G DS
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
300 °C
260 °C
1.13/10 Nm/lb.in.
0.8 g
4g
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ.
Max.
500 V
VGS(th)
VDS = VGS, ID = 250 µA
3.0 5.5 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
5 µA
50 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
6.5 Ω
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99441(09/05)
1 Page Fig. 1. Output Characteristics
@ 25ºC
1.6
VGS = 10V
1.4 8V
1.2 7V
1.0
0.8
6V
0.6
0.4
0.2 5V
0.0
0 2 4 6 8 10 12
VD S - Volts
Fig. 3. Output Characteristics
@ 125ºC
1.6
1.4 VGS = 10V
7V
1.2
1.0
6V
0.8
0.6
0.4
5V
0.2
0.0
0
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
4 8 12 16 20
VD S - Volts
Fig. 5. RDS(on) Norm alize d to
0.5 ID25 Value vs. ID
24
VGS = 10V
TJ = 125∫ C
TJ = 25∫ C
0.4 0.8 1.2 1.6
2
I D - Amperes
2.4 2.8
© 2005 IXYS All rights reserved
IXTP 1R6N50P
IXTY 1R6N50P
www.DataSheet4U.com
Fig. 2. Extended Output Characteristics
@ 25ºC
2.7
2.4 VGS = 10V
8V
2.1 7V
1.8
1.5
1.2
6V
0.9
0.6
0.3 5V
0.0
0 3 6 9 12 15 18 21 24 27 30
VD S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Tem perature
3.00
2.75
2.50
VGS = 10V
2.25
2.00
1.75
ID = 1.6A
1.50
1.25
ID = 0.8A
1.00
0.75
0.50
-50 -25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
3Pages | |||
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