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IXTY1R6N50P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTY1R6N50P
部品説明 Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTY1R6N50P Datasheet, IXTY1R6N50P PDF,ピン配置, 機能
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Advance Technical Information
www.DataSheet4U.com
IXTP 1R6N50P
IXTY 1R6N50P
VDSS =
ID25 =
RDS(on)
500
1.6
6.5
V
A
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 50
TC = 25°C
1.6 mm (0.062 in.) from case for 10s
Maximum tab temperature for soldering
TO-252 package for 10s
Mounting torque (TO-220)
TO-252
TO-220
Maximum Ratings
500 V
500 V
±30 V
±40 V
1.6 A
2.5 A
1.6 A
5 mJ
75 mJ
TO-252 (IXTY)
TO-220 (IXTP)
G
S
TAB
(TAB)
10
43
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
G DS
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
300 °C
260 °C
1.13/10 Nm/lb.in.
0.8 g
4g
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ.
Max.
500 V
VGS(th)
VDS = VGS, ID = 250 µA
3.0 5.5 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
5 µA
50 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
6.5
Advantages
z Easy to mount
z Space savings
z High power density
© 2005 IXYS All rights reserved
DS99441(09/05)

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