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PDF IXFN48N50U3 Data sheet ( Hoja de datos )
| Número de pieza | IXFN48N50U3 | |
| Descripción | HiPerFET Power MOSFETs | |
| Fabricantes | IXYS | |
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HiPerFETTM
Power MOSFETs
VDSS
IXFN44N50U2 IXFN44N50U3 500 V
IXFN48N50U2 IXFN48N50U3 500 V
ID (cont)
44 A
48 A
RDS(on)
0.12 W
0.10 W
trr
35 ns
35 ns
Buck & Boost Configurations for
PFC & Motor Control Circuits
3
4
3
Preliminary data
Symbol
Test Conditions
VDSS
VDGR
V
GS
VGSM
ID25
I
DM
I
AR
E
AR
dv/dt
PD
VRRM
I
FAVM
I
FRM
P
D
TJ
TJM
Tstg
VISOL
M
d
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
T
C
=
25°C,
pulse width limited by max. TJM
T
C
=
25°C
Repetitive
44N50
48N50
44N50
48N50
IS £ IDM, -di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
T
C
=
70°C;
rectangular,
d
=
0.5
tp
<10
ms;
pulse
width
limited
by
T
J
T
C
=
25°C
50/60 Hz, RMS
IISOL £ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque (M4)
Weight
2
2
4
11
Maximum Ratings miniBLOC, SOT-227 B
500
500
±20
±30
44
48
176
192
24
30
5
520
600
60
800
180
-40 ... +150
150
-40 ... +150
2500
3000
V
V
V
V
A
A
A
A
A
mJ
V/ns
W
V
A
A
W
°C
°C
°C
V~
V~
1
2
4
3
Features
· Popular Buck & Boost circuit
topologies
· International standard package
miniBLOC SOT-227B
· Aluminium nitride isolation
- high power dissipation
· Isolation voltage 3000 V~
·
Low
R
DS
(on)
HDMOSTM
process
· Rugged polysilicon gate cell structure
· Low drain-to-case capacitance
(<60 pF)
- reduced RFI
· Ultra-fast FRED diode with soft
reverse recovery
Applications
· Power factor controls and buck
regulators
· DC servo and robotic drives
· DC choppers
· Switch reluctance motor controls
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Advantages
· Easy to mount with 2 screws
· Space savings
· Tightly coupled FRED
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
96535B (7/00)
1-5
1 page  
IXFN44N50U2 IXFN48N50U2
IXFN44N50U3wwwI.DXaFtaNShe4e8t4NU.c5o0mU3
Fig. 11. Forward voltage drop.
Fig. 12. Recovery charge versus -diF/dt. Fig. 13. Peak reverse current vs. -diF/dt.
Fig. 14. Dynamic parameters versus
junction temperature.
Fig. 15. Recovery time versus -diF/dt.
Fig. 16. Peak forward voltage and forward
recovery time vs. diF/dt.
Fig. 17. Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
5-5
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