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PDF IXFH32N50Q Data sheet ( Hoja de datos )
| Número de pieza | IXFH32N50Q | |
| Descripción | HiPerFET Power MOSFETs Q-Class | |
| Fabricantes | IXYS | |
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HiPerFETTM
Power MOSFETs
Q-Class
IXFH 32N50Q
IXFT 32N50Q
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
www.DataSheet4U.com
VDSS ID25
500 V 32 A
500 V 32 A
RDS(on)
0.16 Ω
0.16 Ω
trr ≤ 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C; pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
500
500
±20
±30
32
128
32
45
1500
5
V
V
V
V
A
A
A
mJ
mJ
V/ns
416
-55 ... + 150
150
-55 ... + 150
300
1.13/10
6
4
W
°C
°C
°C
°C
Nm/lb.in.
g
g
Test Conditions
VGS = 0 V, ID = 250 uA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500 V
2.5 4.5 V
±100 nA
TJ = 25°C
TJ = 125°C
100
1
0.16
µA
mA
Ω
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
(TAB)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z IXYS advanced low Qg process
z Low gate charge and capacitances
- easier to drive
- faster switching
z International standard packages
z Low RDS (on)
z Unclamped Inductive Switching (UIS)
rated
z Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS98596E(02/04)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFH32N50Q.PDF ] | |
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