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What is IXFH30N50?

This electronic component, produced by the manufacturer "IXYS", performs the same function as "HiPerFET Power MOSFETs".


IXFH30N50 Datasheet PDF - IXYS

Part Number IXFH30N50
Description HiPerFET Power MOSFETs
Manufacturers IXYS　
Logo IXYS Logo　


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No Preview Available ! IXFH30N50 datasheet, circuit

HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
IXFH/IXFT 30N50
IXFH/IXFT 32N50
www.DataSheet4U.com
V
DSS
500 V
500 V
I
D25
30 A
32 A
R
DS(on)
0.16 W
0.15 W
trr £ 250 ns
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
VGS
V
GSM
Continuous
Transient
±30
ID25 TC = 25°C
IDM TC = 25°C
pulse width limited by TJM
IAR TC = 25°C
30N50
32N50
30N50
32N50
30N50
32N50
EAS
EAR
dv/dt
TC = 25°C
ID = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V,
DSS
TJ £ 150°C, RG = 2 W
PD TC = 25°C
TJ
TJM
Tstg
TL 1.6 mm (0.062 in.) from case for 10 s
M Mounting torque
d
Weight
Maximum Ratings
500 V
500 V
±20 V
V
30 A
32 A
120 A
128 A
30 A
32 A
1.5 J
45 mJ
5 V/ns
360 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 1 mA
VDSS temperature coefficient
VGS(th)
VDS = VGS, ID = 4 mA
VGS(th) temperature coefficient
IGSS VGS = ±20 VDC, VDS = 0
IDSS VDS = 0.8 • VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
RDS(on)
VGS = 10 V, ID = 15A
32N50
30N50
Pulse test, t £ 300 ms, duty cycle d £ 2 %
500
0.102
V
%/K
2 4V
-0.206
%/K
±100
nA
200 mA
1 mA
0.15 W
0.16 W
TO-247 AD (IXFH)
D (TAB)
TO-268 (D3) Case Style
G
S
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Diode
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97518H (6/99)
1-4


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IXFH30N50 electronic component.


Information Total 4 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
IXFH30N50The function is HiPerFET Power MOSFETs. IXYSIXYS
IXFH30N50The function is HiPerFET Power MOSFETs. IXYSIXYS
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