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IXTP75N10PのメーカーはIXYSです、この部品の機能は「N-Channel Enhancement Mode」です。 |
部品番号 | IXTP75N10P |
| |
部品説明 | N-Channel Enhancement Mode | ||
メーカ | IXYS | ||
ロゴ | |||
このページの下部にプレビューとIXTP75N10Pダウンロード(pdfファイル)リンクがあります。 Total 5 pages
PolarHTTM
Power MOSFET
N-Channel Enhancement Mode
Advanced Technical Information
IXTQ 75N10P
IXTA 75N10P
IXTP 75N10P
www.DataSheet4U.com
VDSS =
ID25 =
=RDS(on)
100 V
75 A
25 mΩ
TO-3P (IXTQ)
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque (TO-3P / TO-220)
TO-3P
TO-220
TO-263
Maximum Ratings
100 V
100 V
±20 V
75 A
200 A
50 A
30 mJ
1.0 J
10 V/ns
300
-55 ... +150
150
-55 ... +150
300
260
W
°C
°C
°C
°C
°C
1.13/10 Nm/lb.in.
5.5 g
4g
3g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
100 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
21 25 mΩ
G
DS
TO-220 (IXTP)
(TAB)
G DS
TO-263 (IXTA)
(TAB)
GS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
© 2004 IXYS All rights reserved
DS99158(03/04)
1 Page Fig. 1. Output Characteristics
@ 25ºC
80
VGS = 10V
70 9V
60
50 8V
40
30
7V
20
10
0
0
6V
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4
VD S - Volts
Fig. 3. Output Characteristics
@ 125ºC
80
70
VGS = 10V
9V
60
50 8V
40
30 7V
20
10 6V
5V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VD S - Volts
Fig. 5. RDS(on) Norm alize d to
0.5 ID25 Value vs. ID
2.8
2.6 VGS = 10V
2.4
2.2
2 TJ = 125ºC
1.8
1.6
1.4
1.2
1 TJ = 25ºC
0.8
0
20 40 60 80 100
I D - Amperes
120
© 2004 IXYS All rights reserved
IXTA 75N10P IXTP 75N10P
IXTQ 75N10P
www.DataSheet4U.com
Fig. 2. Extended Output Characteristics
@ 25ºC
120
110
100 VGS = 10V
90
9V
80
70
60 8V
50
40
30 7V
20
10 6V
0
0 1 2 3 4 5 6 7 8 9 10 11 12
VD S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Tem perature
2.2
2 VGS = 10V
1.8
1.6
ID = 75A
1.4
1.2 ID = 37.5A
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
80
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
3Pages | |||
ページ | 合計 : 5 ページ | ||
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部品番号 | 部品説明 | メーカ |
IXTP75N10P | N-Channel Enhancement Mode | IXYS |