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PDF IRF6638TRPbF Data sheet ( 特性 )
| 部品番号 | IRF6638TRPbF |
| |
| 部品説明 | DirectFET Power MOSFET | ||
| メーカ | International Rectifier | ||
| ロゴ |  |
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このページの下部にプレビューとIRF6638TRPbFダウンロード（pdfファイル）リンクがあります。 Total 10 pages
PD - 97239
IRF6638PbF
IRF6638TRPbFwww.DataSheet4U.com
l RoHs Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 2.2mΩ@ 10V 3.0mΩ@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
30nC 11nC 3.2nC 27nC 18.4nC 1.8V
MX
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6638PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6638PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6638PbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6638PbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
30 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
±20
25
20 A
140
200
37 mJ
20 A
10 6.0
8
ID = 25A
5.0 ID= 20A
VDS= 24V
6
4.0
VDS= 15V
VDS= 6.0V
3.0
4
TJ = 125°C
2.0
2
0 TJ = 25°C
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
1.0
0.0
0
5 10 15 20 25 30 35
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.19mH, RG = 25Ω, IAS = 20A.
1
07/13/06
1 Page  
IRF6638PbF
www.DataSheet4U.com
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
TSTG
ePower Dissipation
ePower Dissipation
fPower Dissipation
Parameter
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
emJunction-to-Ambient
kmJunction-to-Ambient
lmJunction-to-Ambient
fmJunction-to-Case
Junction-to-PCB Mounted
eÃLinear Derating Factor
Max.
2.8
1.8
89
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
0.022
Max.
45
–––
–––
1.4
–––
Units
W
°C
Units
°C/W
W/°C
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
SINGLE PULSE
0.01 ( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
τJ τJ
τ1 τ1
R 1R 1
CiC= iτ=i/τRi/iRi
R 2R 2
τ2 τ2
0.01
0.1
R 3R 3
τ3 τ3
R 4R 4
τAτA
τ4 τ4
Ri (°C/W)
1.280114
8.725568
21.75
τi (sec)
0.000322
0.164798
2.2576
13.25114
69
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1 10 100 1000
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Rθ is measured at TJ of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
www.irf.com
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
3Pages 
IRF6638PbF
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
www.DataSheet4U.com
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 15b. Gate Charge Waveform
15V
VDS
L
VRGGS
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 17a. Switching Time Test Circuit
6
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 17b. Switching Time Waveforms
www.irf.com
6 Page | |||
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| 部品番号 | 部品説明 | メーカ |
| IRF6638TRPbF | DirectFET Power MOSFET | International Rectifier |
| IRF6638TRPbF | DirectFET Power MOSFET | International Rectifier |