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IRF6635TRPbF の電気的特性と機能

IRF6635TRPbFのメーカーはInternational Rectifierです、この部品の機能は「DirectFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF6635TRPbF
部品説明 DirectFET Power MOSFET
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF6635TRPbF Datasheet, IRF6635TRPbF PDF,ピン配置, 機能
l RoHs Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
PD - 97086
IRF6635PbF
IRF6635TRPbFwww.DataSheet4U.com
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.3m@ 10V 1.8m@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
47nC 17nC 4.7nC 48nC 29nC 1.8V
MX
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
Description
The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6635PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/
high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The
IRF6635PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
30 V
±20
32
25 A
180
250
200 mJ
25 A
10 6.0
8
ID = 32A
5.0 ID= 25A
VDS = 24V
VDS = 15V
6 4.0
3.0
4
TJ = 125°C
2.0
2
TJ = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
1.0
0.0
0
10 20 30 40 50 60
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.63mH, RG = 25, IAS = 25A.
1
5/3/06

1 Page





IRF6635TRPbF pdf, ピン配列
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
TSTG
ePower Dissipation
ePower Dissipation
fPower Dissipation
Parameter
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
elJunction-to-Ambient
jlJunction-to-Ambient
klJunction-to-Ambient
flJunction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
100
IRF6635PbF
www.DataSheet4U.com
Max.
2.8
1.8
89
270
-40 to + 150
Units
W
°C
Typ.
–––
12.5
20
–––
1.0
0.022
Max.
45
–––
–––
1.4
–––
Units
°C/W
W/°C
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R 1R 1
Ci=
C
iτ=iRi/iR
i
R 2R 2
τ2 τ2
R 3R3
τ3 τ3
R 4R 4
τ4 τ4
τAτA
Ri (°C/W)
0.6784
17.299
17.566
τi (sec)
0.001268
0.033387
0.508924
9.4701 11.19309
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10 100
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
ˆ Used double sided cooling, mounting pad with large heatsink.
‰ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Š Rθ is measured at TJ of approximately 90°C.
ƒ Surface mounted on 1 in. square Cu
(still air).
www.irf.com
‰ Mounted to a PCB with
small clip heatsink (still air)
‰ Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3


3Pages


IRF6635TRPbF 電子部品, 半導体
IRF6635PbF
L
VCC
DUT
0
1K
Vds
Vgs(th)
www.DataSheet4U.com
Id
Vgs
Fig 15a. Gate Charge Test Circuit
Qgs1 Qgs2 Qgd
Qgodr
Fig 15b. Gate Charge Waveform
15V
VDS
L
VRGGS
20V
tp
D.U.T
IAS
0.01
DRIVER
+
-
VDD
A
Fig 16a. Unclamped Inductive Test Circuit
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 17a. Switching Time Test Circuit
6
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 17b. Switching Time Waveforms
www.irf.com

6 Page



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部品番号部品説明メーカ
IRF6635TRPbF

DirectFET Power MOSFET

International Rectifier
International Rectifier


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