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PDF IRF6611 Data sheet ( Hoja de datos )
| Número de pieza | IRF6611 | |
| Descripción | DirectFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF6611 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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PD - 96978A
IRF6611www.DataSheet4U.com
DirectFET™ Power MOSFET
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching above 1MHz
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 2.0mΩ@ 10V 2.6mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
Ideal for CPU Core DC-DC Converters
37nC 12nC 3.3nC 16nC 23nC 1.7V
Optimized for SyncFET Socket of Sync. Buck Converter
Low Conduction Losses
Compatible with Existing Surface Mount Techniques
MX
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
Description
The IRF6611 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest
on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6611 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6611 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
bus converters
dt immunity for
isnycnlucdhirnognoRuDsS(oFnE), Tgaatpepclihcaartgioensa.nd
Cdv/dt-induced
turn
on
immunity.
The
IRF6611
offers
particularly
low
RDS(on)
and
high
Cdv/
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
EAS Single Pulse Avalanche Energy
IAR Avalanche Current
Max.
30
±20
27
22
150
220
210
22
Units
V
A
mJ
A
20
ID = 27A
15
10
5 TJ = 125°C
TJ = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs
Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
6.0
5.0 ID= 22A
4.0
VDS= 24V
VDS= 15V
3.0
2.0
1.0
0.0
0
10 20 30 40 50
QG Total Gate Charge (nC)
Fig 2. Typical On-Resistance vs. Gate Voltage
Starting TJ = 25°C, L = 0.91mH, RG = 25Ω, IAS = 22A.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
1
04/18/05
1 page  
IRF6611
1000
1000
www.DataSheet4U.com
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100 100
10
TJ = 150°C
1 TJ = 25°C
TJ = 40°C
VGS = 0V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
160
Limited by package
140
120
100
80
60
40
20
0
25 50 75 100 125 150
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
10 100µsec
1msec
10msec
1
Ta = 25°C
Tj = 150°C
Single Pulse
0.1
00
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
2.0
1.8
1.6
ID = 50µA
1.4
1.2
1.0
0.8
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Threshold Voltage vs. Temperature
www.irf.com
900
800
ID TOP
8.7A
700 11A
BOTTOM 22A
600
500
400
300
200
100
0
25 50 75 100 125
Starting T J , Junction Temperature (°C)
150
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6611.PDF ] | |
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