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PDF IS41LV16400 Data sheet ( Hoja de datos )
| Número de pieza | IS41LV16400 | |
| Descripción | 4Mx16 (64-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | |
| Fabricantes | Integrated Silicon Solution | |
| Logotipo |  |
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IS41LV16400
4M x 16 (64-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
ISSI®
www.DataSheet4U.com
NOVEMBER 1999
FEATURES
• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval: 4,096 cycles / 64 ms
• Auto refresh Mode: RAS-Only, CAS-before-RAS
(CBR), and Hidden
• Low Standby power dissipation:
– 1.8mW(max) CMOS Input Level
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Extended Temperature Range -30oC to 85oC
• Industrail Temperature Range -40oC to 85oC
DESCRIPTION
The ISSI IS41LV16400 is 4,194,304 x 16-bit high-perfor-
mance CMOS Dynamic Random Access Memories.
These devices offer an accelerated cycle access called
EDO Page Mode. EDO Page Mode allows 1,024 random
accesses within a single row with access cycle time as
short as 20 ns per 16-bit word. The Byte Write control, of
upper and lower byte, makes the IS41LV16400 ideal for
use in 16-bit wide data bus systems.
These features make the S41LV16400 ideally suited for
high-bandwidth graphics, digital signal processing,
high-performance computing systems, and peripheral
applications.
The IS41LV16400 is packaged in a 50-pin TSOP (Type II).
JEDEC standard pinout.
PIN CONFIGURATION
50-Pin TSOP (Type II)
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
VCC
W
RAS
NC
NC
NC
NC
A0
A1
A2
A3
A4
A5
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50 GND
49 I/O15
48 I/O14
47 I/O13
46 I/O12
45 GND
44 I/O11
43 I/O10
42 I/O9
41 I/O8
40 NC
39 GND
38 LCAS
37 UCAS
36 OE
35 NC
34 NC
33 NC
32 A11
31 A10
30 A9
29 A8
28 A7
27 A6
26 GND
PIN DESCRIPTIONS
A0-A11
I/O0-15
WE
OE
RAS
UCAS
LCAS
Vcc
GND
NC
Address Inputs
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Power
Ground
No Connection
KEY TIMING PARAMETERS
Parameter
-50 -60 Unit
Max. RAS Access Time (tRAC)
50 60 ns
Max. CAS Access Time (tCAC)
13 15 ns
Max. Column Address Access Time (tAA) 25 30 ns
Min. EDO Page Mode Cycle Time (tPC) 20 25 ns
Min. Read/Write Cycle Time (tRC)
84 104 ns
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/18/99
1
1 page  
IS41LV16400
ABSOLUTE MAXIMUM RATINGS(1)
ISSI ®
www.DataSheet4U.com
Symbol Parameters
Rating
Unit
VT
Voltage on Any Pin Relative to GND
–0.5 to +4.6
V
VCC Supply Voltage
–0.5 to +4.6
V
IOUT Output Current
50 mA
PD Power Dissipation
1W
TA Commercial Operation Temperature
0 to +70
°C
Extended Temperature
–30 to +85
°C
Industrail Temperature
–40 to +85
°C
TSTG
Storage Temperature
–55 to +125
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
VCC
VIH
VIL
TA
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Commercial Ambient Temperature
Extended Ambient Temperature
Industrail Ambient Temperature
Min.
3.0
2.0
–0.3
0
–30
–40
Typ.
3.3
—
—
—
—
—
Max.
3.6V
VCC + 0.3
0.8
70
85
85
Unit
V
V
V
°C
°C
°C
CAPACITANCE(1,2)
Symbol
CIN1
CIN2
CIO
Parameter
Input Capacitance: A0-A11
Input Capacitance: RAS, UCAS, LCAS, WE, OE
Data Input/Output Capacitance: I/O0-I/O15
Max.
5
7
7
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz.
Unit
pF
pF
pF
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/18/99
5
5 Page 
IS41LV16400
EARLY WRITE CYCLE (OE = DON'T CARE)
RAS
tCRP
UCAS/LCAS
tASR
ADDRESS
Row
WE
I/O
tRAS
tRC
tRCD
tCSH
tRSH
tCAS tCLCH
tRAD
tRAH
tASC
tAR
tRAL
tCAH
tACH
Column
tWCR
tWCS
tCWL
tRWL
tWCH
tWP
tDHR
tDS
tDH
Valid Data
ISSI ®
www.DataSheet4U.com
tRP
Row
Don’t Care
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/18/99
11
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