|
|
PDF IS41LV16105B Data sheet ( Hoja de datos )
| Número de pieza | IS41LV16105B | |
| Descripción | 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | |
| Fabricantes | Integrated Silicon Solution | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IS41LV16105B (archivo pdf) en la parte inferior de esta página. Total 20 Páginas | ||
|
No Preview Available !
IS41LV16105B
1M x 16 (16-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
ISSI®
www.DataSheet4U.com
APRIL 2005
FEATURES
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
— 1,024 cycles/16 ms
• Refresh Mode:
— RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Extended Temperature Range: -30oC to +85oC
• Industrial Temperature Range: -40oC to +85oC
• Lead-free available
DESCRIPTION
The ISSI IS41LV16105B is 1,048,576 x 16-bit high-perfor-
mance CMOS Dynamic Random Access Memories. Fast Page
Mode allows 1,024 random accesses within a single row with
access cycle time as short as 20 ns per 16-bit word. The Byte
Write control, of upper and lower byte, makes the IS41LV16105B
ideal for use in 16-, 32-bit wide data bus systems.
These features make the IS41LV16105B ideally suited for high-
bandwidth graphics, digital signal processing, high-performance
computing systems, and peripheral applications.
The IS41LV16105B is packaged in a 42-pin 400-mil SOJ and
400-mil 44- (50-) pin TSOP (Type II).
KEY TIMING PARAMETERS
PIN CONFIGURATIONS
44(50)-Pin TSOP (Type II)
42-Pin SOJ
VDD
I/O0
I/O1
I/O2
I/O3
VDD
I/O4
I/O5
I/O6
I/O7
NC
1
2
3
4
5
6
7
8
9
10
11
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VDD
12
13
14
15
16
17
18
19
20
21
22
44 GND
43 I/O15
42 I/O14
41 I/O13
40 I/O12
39 GND
38 I/O11
37 I/O10
36 I/O9
35 I/O8
34 NC
33 NC
32 LCAS
31 UCAS
30 OE
29 A9
28 A8
27 A7
26 A6
25 A5
24 A4
23 GND
VDD
I/O0
I/O1
I/O2
I/O3
VDD
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42 GND
41 I/O15
40 I/O14
39 I/O13
38 I/O12
37 GND
36 I/O11
35 I/O10
34 I/O9
33 I/O8
32 NC
31 LCAS
30 UCAS
29 OE
28 A9
27 A8
26 A7
25 A6
24 A5
23 A4
22 GND
Parameter
-50 -60 Unit
Max. RAS Access Time (tRAC)
50 60 ns
Max. CAS Access Time (tCAC)
13 15 ns
Max. Column Address Access Time (tAA) 25 30 ns
Min. Fast Page Mode Cycle Time (tPC) 20 25 ns
Min. Read/Write Cycle Time (tRC)
84 104 ns
PIN DESCRIPTIONS
A0-A9
I/O0-15
WE
OE
RAS
UCAS
LCAS
VDD
GND
NC
Address Inputs
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Power
Ground
No Connection
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
1
1 page  
IS41LV16105B
ABSOLUTE MAXIMUM RATINGS(1)
ISSI®
www.DataSheet4U.com
Symbol Parameters
Rating Unit
VT Voltage on Any Pin Relative to GND 3.3V –0.5 to +4.6 V
VDD Supply Voltage
3.3V –0.5 to +4.6 V
IOUT Output Current
50 mA
PD Power Dissipation
1W
TA Commercial Operation Temperature
Extended Temperature
Industrial Temperature
0 to +70
–30 to +85
–40 to +85
°C
°C
°C
TSTG
Storage Temperature
–55 to +125 °C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
VDD
VIH
VIL
TA
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Commercial Ambient Temperature
Extended Ambient Temperature
Industrial Ambient Temperature
3.3V
3.3V
3.3V
Min.
3.0
2.0
–0.3
0
–30
–40
Typ.
3.3
—
—
—
—
—
Max.
3.6
VDD + 0.3
0.8
+70
+85
+85
Unit
V
V
V
°C
°C
°C
CAPACITANCE(1,2)
Symbol
Parameter
Max.
CIN1 Input Capacitance: A0-A9
CIN2 Input Capacitance: RAS, UCAS, LCAS, WE, OE
5
7
CIO Data Input/Output Capacitance: I/O0-I/O15
7
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz,
Unit
pF
pF
pF
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
5
5 Page 
IS41LV16105B
FAST PAGE MODE READ-MODIFY-WRITE CYCLE
ISSI®
www.DataSheet4U.com
RAS
tRASP
tRP
tCRP
UCAS/LCAS
tRCD
tCSH
tCAS
ADDRESS
tAR
tRAH
tASR
tRAD
Row
tCAH
tASC
Column
tAR
WE
tRCS
tCWL
tRWD
tAWD
tCWD
tAA
tCAC
OE tOEA
tPRWC
tCAS
tCP
tCPWD
tASC
tCAH
Column
tCWL
tAWD
tWP tCWD
tAA
tCAC
tOEA
tRSH
tCAS
tCP
tCRP
tCPWD
tRAL
tASC
tCAH
Column
tCWL
tRWL
tAWD
tWP tCWD
tWP
tAA
tCAC
tOEA
I/O0-I/O15
tRAC
tCLZ
OUT
tOEZ
tOED
tDH
tDS tCLZ
IN
tOEZ
tOED
tDS
tDH
OUT IN
tCLZ
OUT
tOEZ
tOED
tDS
tDH
IN
Don’t Care
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
11
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet IS41LV16105B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IS41LV16105 | 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | Integrated Silicon Solution |
| IS41LV16105B | 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | Integrated Silicon Solution |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |