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PDF IS41LV16105 Data sheet ( Hoja de datos )
| Número de pieza | IS41LV16105 | |
| Descripción | 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE | |
| Fabricantes | Integrated Silicon Solution | |
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IS41C16105
IS41LV16105
www.DataSheet4U.com
1M x 16 (16-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
FEATURES
TTL compatible inputs and outputs; tristate I/O
Refresh Interval: 1,024 cycles/16 ms
Refresh Mode: RAS-Only, CAS-before-RAS (CBR),
Hidden
JEDEC standard pinout
Single power supply:
5V ± 10% (IS41C16105)
3.3V ± 10% (IS41LV16105)
Byte Write and Byte Read operation via two CAS
Industrail temperature range -40oC to 85oC
DESCRIPTION
The 1+51 IS41C16105 and IS41LV16105 are 1,048,576 x
16-bit high-performance CMOS Dynamic Random Access
Memories. Fast Page Mode allows 1,024 random accesses
within a single row with access cycle time as short as 20 ns per
16-bit word. The Byte Write control, of upper and lower byte,
makes the IS41C16105 ideal for use in 16-, 32-bit wide data
bus systems.
These features make the IS41C16105 and IS41LV16105
ideally suited for high-bandwidth graphics, digital signal
processing, high-performance computing systems, and
peripheral applications.
The IS41C16105 and IS41LV16105 are packaged in a
42-pin 400mil SOJ and 400mil 44- (50-) pin TSOP-2.
KEY TIMING PARAMETERS
Parameter
Max. RAS Access Time (tRAC)
Max. CAS Access Time (tCAC)
Max. Column Address Access Time (tAA)
Min. Fast Page Mode Cycle Time (tPC)
Min. Read/Write Cycle Time (tRC)
-50
50
13
25
20
84
-60 Unit
60 ns
15 ns
30 ns
25 ns
104 ns
PIN CONFIGURATIONS
44(50)-Pin TSOP-2
42-Pin SOJ
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
1
2
3
4
5
6
7
8
9
10
11
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VCC
15
16
17
18
19
20
21
22
23
24
25
50 GND
49 I/O15
48 I/O14
47 I/O13
46 I/O12
45 GND
44 I/O11
43 I/O10
42 I/O9
41 I/O8
40 NC
36 NC
35 LCAS
34 UCAS
33 OE
32 A9
31 A8
30 A7
29 A6
28 A5
27 A4
26 GND
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42 GND
41 I/O15
40 I/O14
39 I/O13
38 I/O12
37 GND
36 I/O11
35 I/O10
34 I/O9
33 I/O8
32 NC
31 LCAS
30 UCAS
29 OE
28 A9
27 A8
26 A7
25 A6
24 A5
23 A4
22 GND
PIN DESCRIPTIONS
A0-A9
I/O0-15
WE
OE
RAS
UCAS
LCAS
Vcc
GND
NC
Address Inputs
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Power
Ground
No Connection
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
DR005-0C
1
1 page  
IS41C16105
IS41LV16105
ABSOLUTE MAXIMUM RATINGS(1)
www.DataSheet4U.com
Symbol Parameters
Rating Unit
VT
VCC
IOUT
PD
TA
TSTG
Voltage on Any Pin Relative to GND
Supply Voltage
Output Current
Power Dissipation
Commercial Operation Temperature
Industrail Operation Temperature
Storage Temperature
5V
3.3V
5V
3.3V
1.0 to +7.0
0.5 to +4.6
1.0 to +7.0
0.5 to +4.6
50
1
0 to +70
40 to +85
55 to +125
V
V
mA
W
°C
°C
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
VCC
VIH
VIL
TA
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Commercial Ambient Temperature
Industrail Ambient Temperature
5V
3.3V
5V
3.3V
5V
3.3V
Min.
4.5
3.0
2.4
2.0
1.0
0.3
0
40
Typ.
5.0
3.3
Max.
5.5
3.6
VCC + 1.0
VCC + 0.3
0.8
0.8
70
85
Unit
V
V
V
°C
°C
CAPACITANCE(1,2)
Symbol
CIN1
CIN2
CIO
Parameter
Input Capacitance: A0-A9
Input Capacitance: RAS, UCAS, LCAS, WE, OE
Data Input/Output Capacitance: I/O0-I/O15
Max.
5
7
7
Unit
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz,
Integrated Circuit Solution Inc.
DR005-0C
5
5 Page 
IS41C16105
IS41LV16105
READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE Cycles)
www.DataSheet4U.com
RAS
tCRP
UCAS/LCAS
tASR
ADDRESS
WE
I/O
OE
Row
tRWC
tRAS
tRP
tRCD
tCSH
tRSH
tCAS tCLCH
tRAD
tRAH
tAR
tASC
tCAH
tRAL
tACH
tRCS
Column
tRWD
tCWD
tAWD
Row
tCWL
tRWL
tWP
Open
tRAC
tCAC
tCLZ
tAA
tOE
tDS tDH
Valid DOUT Valid DIN
Open
tOD tOEH
Don’t Care
Integrated Circuit Solution Inc.
DR005-0C
11
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet IS41LV16105.PDF ] | |
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