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PDF IS41C16100S Data sheet ( Hoja de datos )
| Número de pieza | IS41C16100S | |
| Descripción | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | |
| Fabricantes | Integrated Silicon Solution | |
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IS41C16100S
IS41LV16100S
www.DataSheet4U.com
1M x 16 (16-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
FEATURES
• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
Refresh Mode: 1,024 cycles /16 ms
RAS-Only, CAS-before-RAS (CBR), and Hidden
Self refresh Mode - 1,024 cycles / 128ms
• JEDEC standard pinout
DESCRIPTION
The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x
16-bit high-performance CMOS Dynamic Random Access
Memories. These devices offer an accelerated cycle access
called EDO Page Mode. EDO Page Mode allows 1,024 ran-
dom accesses within a single row with access cycle time as
short as 20 ns per 16-bit word. The Byte Write control, of upper
and lower byte, makes the IS41C16100S ideal for use in
16-, 32-bit wide data bus systems.
• Single power supply:
5V ± 10% (IS41C16100S)
3.3V ± 10% (IS41LV16100S)
• Byte Write and Byte Read operation via two CAS
These features make the IS41C16100Sand IS41LV16100S
ideally suited for high-bandwidth graphics, digital signal
processing, high-performance computing systems, and
peripheral applications.
• Industrail Temperature Range -40°C to 85°C
EY TIMING PARAMETERS
The IS41C16100S and IS41LV16100S are packaged in a
42-pin 400mil SOJ and 400mil 50- (44-) pin TSOP-2.
Parameter
Max. RAS Access Time (tRAC)
Max. CAS Access Time (tCAC)
-45(1)
-50
-60 Unit
45 50 60 ns
11 13 15 ns
Max. Column Address Access Time (tAA)
22
25
30
ns
Min. EDO Page Mode Cycle Time (tPC)
Min. Read/Write Cycle Time (tRC)
16
77
20 25 ns
84 104 ns
Note:
1. 45 ns Only for Vcc = 3.3V.
PIN CONFIGURATIONS
50(44)-Pin TSOP II
42-Pin SOJ
PIN DESCRIPTIONS
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
1
2
3
4
5
6
7
8
9
10
11
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VCC
15
16
17
18
19
20
21
22
23
24
25
50 GND
49 I/O15
48 I/O14
47 I/O13
46 I/O12
45 GND
44 I/O11
43 I/O10
42 I/O9
41 I/O8
40 NC
36 NC
35 LCAS
34 UCAS
33 OE
32 A9
31 A8
30 A7
29 A6
28 A5
27 A4
26 GND
VCC
I/O0
I/O1
I/O2
I/O3
VCC
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42 GND
41 I/O15
40 I/O14
39 I/O13
38 I/O12
37 GND
36 I/O11
35 I/O10
34 I/O9
33 I/O8
32 NC
31 LCAS
30 UCAS
29 OE
28 A9
27 A8
26 A7
25 A6
24 A5
23 A4
22 GND
A0-A9 Address Inputs
I/O0-15
WE
OE
RAS
UCAS
LCAS
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Vcc Power
GND Ground
NC No Connection
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
DR004-0B
1
1 page  
IS41C16100S
IS41LV16100S
ABSOLUTE MAXIMUM RATINGS(1)
www.DataSheet4U.com
Symbol Parameters
Rating Unit
VT
Voltage on Any Pin Relative to GND
5V –1.0 to +7.0 V
3.3V –0.5 to +4.6
VCC Supply Voltage
5V –1.0 to +7.0 V
3.3V –0.5 to +4.6
IOUT Output Current
50 mA
PD Power Dissipation
1W
TA Commercial Operation Temperature
Industrial Operationg Temperature
0 to +70 °C
–40 to +85 °C
TSTG
Storage Temperature
–55 to +125 °C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
VCC
VIH
VIL
TA
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Commercial Ambient Temperature
Industrial Ambient Temperature
5V
3.3V
5V
3.3V
5V
3.3V
Min.
4.5
3.0
2.4
2.0
–1.0
–0.3
0
–40
Typ.
5.0
3.3
—
—
—
—
—
—
Max.
5.5
3.6
VCC + 1.0
VCC + 0.3
0.8
0.8
70
85
Unit
V
V
V
°C
°C
CAPACITANCE(1,2)
Symbol Parameter
Max.
Unit
CIN1 Input Capacitance: A0-A9
CIN2 Input Capacitance: RAS, UCAS, LCAS, WE, OE
CIO Data Input/Output Capacitance: I/O0-I/O15
5 pF
7 pF
7 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz.
Integrated Circuit Solution Inc.
DR004-0B
5
5 Page 
IS41C16100S
IS41LV16100S
EARLY WRITE CYCLE (OE = DON'T CARE)
RAS
tCRP
UCAS/LCAS
tASR
ADDRESS
Row
WE
I/O
tRAS
tRC
tRCD
tCSH
tRSH
tCAS tCLCH
tRAD
tRAH
tASC
tAR
tRAL
tCAH
tACH
Column
tWCR
tWCS
tCWL
tRWL
tWCH
tWP
tDHR
tDS
tDH
Valid Data
www.DataSheet4U.com
tRP
Row
Don’t Care
Integrated Circuit Solution Inc.
DR004-0B
11
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| PDF Descargar | [ Datasheet IS41C16100S.PDF ] | |
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