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PDF IS41LV16100B Data sheet ( Hoja de datos )
| Número de pieza | IS41LV16100B | |
| Descripción | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE | |
| Fabricantes | Integrated Silicon Solution | |
| Logotipo |  |
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IS41LV16100B
1M x 16 (16-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
ISSI®
www.DataSheet4U.com
APRIL 2005
FEATURES
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:
— Auto refresh Mode: 1,024 cycles /16 ms
— RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Industrial Temperature Range: -40oC to +85oC
• Lead-free available
DESCRIPTION
The ISSI IS41LV16100B is 1,048,576 x 16-bit high-perfor-
mance CMOS Dynamic Random Access Memories. These
devices offer an accelerated cycle access called EDO
Page Mode. EDO Page Mode allows 1,024 random ac-
cesses within a single row with access cycle time as short
as 20 ns per 16-bit word.
These features make the IS41LV16100B ideally suited for
high-bandwidth graphics, digital signal processing, high-
performance computing systems, and peripheral
applications.
The IS41LV16100B is packaged in a 42-pin 400-mil SOJ
and 400-mil 50- (44-) pin TSOP (Type II).
PIN CONFIGURATIONS
50(44)-Pin TSOP (Type II)
42-Pin SOJ
VDD
I/O0
I/O1
I/O2
I/O3
VDD
I/O4
I/O5
I/O6
I/O7
NC
1
2
3
4
5
6
7
8
9
10
11
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VDD
12
13
14
15
16
17
18
19
20
21
22
44 GND
43 I/O15
42 I/O14
41 I/O13
40 I/O12
39 GND
38 I/O11
37 I/O10
36 I/O9
35 I/O8
34 NC
33 NC
32 LCAS
31 UCAS
30 OE
29 A9
28 A8
27 A7
26 A6
25 A5
24 A4
23 GND
VDD
I/O0
I/O1
I/O2
I/O3
VDD
I/O4
I/O5
I/O6
I/O7
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42 GND
41 I/O15
40 I/O14
39 I/O13
38 I/O12
37 GND
36 I/O11
35 I/O10
34 I/O9
33 I/O8
32 NC
31 LCAS
30 UCAS
29 OE
28 A9
27 A8
26 A7
25 A6
24 A5
23 A4
22 GND
KEY TIMING PARAMETERS
Parameter
Max. RAS Access Time (tRAC)
Max. CAS Access Time (tCAC)
-50 -60 Unit
50 60 ns
14 15 ns
Max. Column Address Access Time (tAA) 25 30 ns
Min. EDO Page Mode Cycle Time (tPC) 30 40 ns
Min. Read/Write Cycle Time (tRC)
85 110 ns
PIN DESCRIPTIONS
A0-A9
I/O0-15
WE
OE
RAS
UCAS
LCAS
VDD
GND
NC
Address Inputs
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Power
Ground
No Connection
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
04/14/05
1
1 page  
IS41LV16100B
ABSOLUTE MAXIMUM RATINGS(1)
ISSI®
www.DataSheet4U.com
Symbol Parameters
Rating Unit
VT
Voltage on Any Pin Relative to GND
3.3V –0.5 to +4.6 V
VDD Supply Voltage
3.3V –0.5 to +4.6 V
IOUT Output Current
50 mA
PD Power Dissipation
1W
TA Commercial Operation Temperature
Industrial Operation Temperature
0 to +70
-40 to +85
°C
°C
TSTG
Storage Temperature
–55 to +125 °C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
VDD
VIH
VIL
TA
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Commercial Ambient Temperature
Industrial Ambient Temperature
3.3V
3.3V
3.3V
Min.
3.0
2.0
–0.3
0
–40
Typ.
3.3
—
—
—
—
Max.
3.6
VDD + 0.3
0.8
70
85
Unit
V
V
V
°C
°C
CAPACITANCE(1,2)
Symbol
Parameter
Max.
CIN1 Input Capacitance: A0-A9
CIN2 Input Capacitance: RAS, UCAS, LCAS, WE, OE
5
7
CIO Data Input/Output Capacitance: I/O0-I/O15
7
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz.
Unit
pF
pF
pF
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
04/13/05
5
5 Page 
IS41LV16100B
EARLY WRITE CYCLE (OE = DON'T CARE)
RAS
tCRP
UCAS/LCAS
tASR
ADDRESS
Row
WE
I/O
tRAS
tRC
tRCD
tCSH
tRSH
tCAS tCLCH
tRAD
tRAH
tASC
tAR
tRAL
tCAH
tACH
Column
tWCR
tWCS
tCWL
tRWL
tWCH
tWP
tDHR
tDS
tDH
Valid Data
ISSI®
www.DataSheet4U.com
tRP
Row
Don’t Care
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
04/13/05
11
11 Page | ||
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| PDF Descargar | [ Datasheet IS41LV16100B.PDF ] | |
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