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PDF IXFX120N25 Data sheet ( Hoja de datos )
| Número de pieza | IXFX120N25 | |
| Descripción | HiPerFET Power MOSFETs | |
| Fabricantes | IXYS | |
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Advance Technical Information
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HiPerFETTM
Power MOSFETs
Single MOSFET Die
IXFX 120N25
IXFK 120N25
VDSS =
ID25 =
=RDS(on)
250 V
120 A
22 mΩ
trr ≤ 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
ID104
I
DM
IAR
EAR
EAS
dv/dt
PD
T
J
TJM
Tstg
T
L
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C (MOSFET chip capability)
TC = 104°C (External lead capability)
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
Maximum Ratings
250 V
250 V
±20 V
±30 V
120 A
75 A
480 A
90 A
64 mJ
3J
5 V/ns
560 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
0.7/6 Nm/lb.in.
6g
10 g
PLUS 247TM (IXFX)
G
D
TO-264 AA (IXFK)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l International standard packages
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l Fast intrinsic rectifier
Symbol
V
DSS
V
GS(th)
IGSS
IDSS
RDS(on)
Test Conditions
V = 0 V, I = 1mA
GS D
V = V , I = 8mA
DS GS D
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
250 V
2.0 4.0 V
±200 nA
TJ = 25°C
TJ = 125°C
50 µA
3 mA
22 mΩ
Applications
l DC-DC converters
l Battery chargers
l Switched-mode and resonant-mode
power supplies
l DC choppers
l AC motor control
l Temperature and lighting controls
Advantages
l PLUS 247TM package for clip or spring
mounting
l Space savings
l High power density
© 2002 IXYS All rights reserved
98912 (2/02)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFX120N25.PDF ] | |
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