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IRAMY20UP60B の電気的特性と機能

IRAMY20UP60BのメーカーはInternational Rectifierです、この部品の機能は「iMOTION Series」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRAMY20UP60B
部品説明 iMOTION Series
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRAMY20UP60B Datasheet, IRAMY20UP60B PDF,ピン配置, 機能
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PD-96955 Rev. A
IRAMY20UP60B
Series
Integrated Power Hybrid IC for
20A, 600V
Appliance Motor Drive Applications. with Internal Shunt Resistor
Description
International Rectifier's IRAMY20UP60B is a 20A, 600V Integrated Power Hybrid IC with Internal Shunt
Resistor for Appliance Motor Drives applications such as air conditioning systems and compressor drivers as
well as for light industrial application. IR's technology offers an extremely compact, high performance AC
motor-driver in a single isolated package to simplify design.
This advanced HIC is a combination of
benchmark 3-Phase high voltage, high
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industry
A built-in temperature monitor and over-current and over-temperature protections, along with the short-
circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-
safe operation. Using a new developed single in line package (SiP3) with heatspreader for the power die
along with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink.
Features
• Integrated Gate Drivers
• Temperature Monitor and Protection
• Overcurrent shutdown
• Fully Isolated Package
• Low VCE (on) Non Punch Through IGBT Technology.
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• 5V Schmitt-triggered input logic
• Cross-conduction prevention logic
• Lower di/dt gate driver for better noise immunity
• Motor Power range 0.75~2.2kW / 85~253 Vac
• Isolation 2000VRMS min
Absolute Maximum Ratings
Parameter
Description
Value
Units
VCES / VRRM
V+
IGBT/Diode Blocking Voltage
Positive Bus Input Voltage
600 V
450
IO @ TC=25°C
RMS Phase Current (Note 1)
20
IO @ TC=100°C
RMS Phase Current (Note 1)
10 A
IO Pulsed RMS Phase Current (Note 2)
40
FPWM
PWM Carrier Frequency
20 kHz
PD Power dissipation per IGBT @ TC =25°C
68 W
VISO Isolation Voltage (1min)
2000
VRMS
TJ (IGBT & Diodes)
TJ (Driver IC)
Operating Junction temperature Range
Operating Junction temperature Range
-40 to +150
-40 to +150
°C
T Mounting torque Range (M4 screw)
0.7 to 1.17
Nm
Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=20kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: tP<100ms; TC=25°C; FPWM=20kHz. Limited by IBUS-ITRIP, see Table "Inverter Section Electrical Characteristics"
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IRAMY20UP60B pdf, ピン配列
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IRAMY20UP60B
Absolute Maximum Ratings (Continued)
Symbol
Parameter
Min
IBDF
PBR Peak
VS1,2,3
Bootstrap Diode Peak Forward
Current
Bootstrap Resistor Peak Power
(Single Pulse)
High side floating supply offset
voltage
---
---
VB1,2,3 - 25
VB1,2,3
High side floating supply voltage
-0.3
VCC
Low Side and logic fixed supply
voltage
-0.3
VIN
Input voltage LIN, HIN, ITrip
-0.3
Max
4.5
25.0
VB1,2,3 +0.3
Units Conditions
A
tP= 10ms,
TJ = 150°C, TC=100°C
W
tP=100µs, TC =100°C
ESR / ERJ series
V
600 V
20
Lower of
(VSS+15V) or
VCC+0.3V
V
V
Inverter Section Electrical Characteristics @TJ= 25°C
Symbol
Parameter
Min Typ Max Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown
Voltage
600
---
V(BR)CES / T
Temperature Coeff. Of
Breakdown Voltage
--- 0.3
--- V VIN=5V, IC=250µA
---
V/°C
VIN=5V, IC=1.0mA
(25°C - 150°C)
VCE(ON)
Collector-to-Emitter Saturation
Voltage
--- 1.75 2.15
--- 2.00 2.50
V IC=10A, VCC=15V
IC=10A, VCC=15V, TJ=125°C
ICES
Zero Gate Voltage Collector
Current
---
---
5
80
80
---
µA
VIN=5V, V+=600V
VIN=5V, V+=600V, TJ=125°C
VFM
Diode Forward Voltage Drop
--- 1.9 2.6
--- 1.6 2.3
V IC=10A
IC=10A, TJ=125°C
VBDFM
Bootstrap Diode Forward Voltage
Drop
--
---
-- 1.25
--- 1.10
V IF=1A
IF=1A, TJ=125°C
RBR
Bootstrap Resistor Value
--- 22 ---
TJ=25°C
RBR/RBR
IBUS_TRIP
Bootstrap Resistor Tolerance
Current Protection Threshold
(positive going)
--- --- ±5 % TJ=25°C
26 --- 34
A tON > 175µs
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IRAMY20UP60B 電子部品, 半導体
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IRAMY20UP60B
Thermal and Mechanical Characteristics
Symbol
Parameter
Min Typ
Rth(J-C)
Thermal resistance, per IGBT
--- 1.6
Rth(J-C)
Thermal resistance, per Diode
--- 2.2
Rth(C-S)
Thermal resistance, C-S
--- 0.1
CD Creepage Distance
3.5 ---
Max
1.8
3
---
---
Units Conditions
Flat, greased surface. Heatsink
°C/W compound thermal conductivity
1W/mK
mm See outline Drawings
Internal Current Sensing Resistor - Shunt Characteristics
Symbol
Parameter
Min Typ Max Units Conditions
RShunt
Resistance
16.8 17.0 17.2 mTC = 25°C
TCoeff
PShunt
Temperature Coefficient
Power Dissipation
0 --- 200 ppm/°C
--- --- 4.5 W -40°C< TC <100°C
TRange
Temperature Range
-40 --- 125 °C
Internal Current Sensing Resistor - Shunt Characteristics
Symbol
Parameter
Min Typ Max Units Conditions
RShunt
Resistance
16.8 17.0 17.2 mTC = 25°C
TCoeff
PShunt
Temperature Coefficient
Power Dissipation
0 --- 200 ppm/°C
--- --- 4.5 W -40°C< TC <100°C
TRange
Temperature Range
-40 --- 125 °C
Input-Output Logic Level Table
V+
Hin1,2,3
(13 ,14 , 15 )
Lin 1, 2, 3
(16 ,17 , 18 )
Ho
IC
Driver
Lo
U,V,W
(2,5,8)
ITRIP HIN1,2,3 LIN1,2,3 U,V,W
0 0 1 V+
0100
011X
1XXX
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部品番号部品説明メーカ
IRAMY20UP60B

iMOTION Series

International Rectifier
International Rectifier


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