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IS61LPD51218A PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IS61LPD51218A
部品説明 256K x 36 - 512K x 18 9 Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM
メーカ Integrated Silicon Solution
ロゴ Integrated Silicon Solution ロゴ 



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IS61LPD51218A Datasheet, IS61LPD51218A PDF,ピン配置, 機能
IS61VPD25636A IS61LPD25636A
IS61VPD51218A IS61LPD51218A
256K x 36, 512K x 18
9 Mb SYNCHRONOUS PIPELINED,
DOUBLE CYCLE DESELECT STATIC RAM
ISSI®
www.DataSheet4U.com
MAY 2005
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Burst sequence control using MODE input
• Three chip enable option for simple depth
expansion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Double cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for PBGA package
• Power Supply
LPD: VDD 3.3V + 5%, VDDQ 3.3V/2.5V + 5%
VPD: VDD 2.5V + 5%, VDDQ 2.5V + 5%
• JEDEC 100-Pin TQFP,
119-pin PBGA and 165-pin PBGA package
DESCRIPTION
The ISSIIS61LPD/VPD25636AandIS61LPD/VPD51218A
are high-speed, low-power synchronous static RAMs de-
signed to provide burstable, high-performance memory for
communication and networking applications. The IS61LPD/
VPD25636A is organized as 262,144 words by 36 bits, and
the IS61LPD/VPD51218A is organized as 524,288 words
by 18 bits. Fabricated with ISSI's advanced CMOS technol-
ogy, the device integrates a 2-bit burst counter, high-speed
SRAM core, and high-drive capability outputs into a single
monolithic circuit. All synchronous inputs pass through
registers controlled by a positive-edge-triggered single
clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be one to four
bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
The byte write operation is performed by using the byte
write enable (BWE) input combined with one or more
individual byte write signals (BWx). In addition, Global
Write (GW) is available for writing all bytes at one time,
regardless of the byte write controls.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the ADV (burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
FAST ACCESS TIME
Symbol
tKQ
tKC
Parameter
Clock Access Time
Cycle Time
Frequency
250 200 Units
2.6 3.1
ns
4 5 ns
250 200 MHz
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
05/09/05
1

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IS61LPD51218A

256K x 36 - 512K x 18 9 Mb SYNCHRONOUS PIPELINED DOUBLE CYCLE DESELECT STATIC RAM

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IS61LPD51218A

256K x 36/ 512K x 18 9Mb SYNCHRONOUS PIPELINED / DOUBLE CYCLE DESELECT STATIC RAM

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