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PDF DSEC30-12A Data sheet ( Hoja de datos )

Número de pieza DSEC30-12A
Descripción HiPerFRED Epitaxial Diode with common cathode and soft recovery
Fabricantes IXYS Corporation 
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No Preview Available ! DSEC30-12A Hoja de datos, Descripción, Manual

HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery
DSEC 30-12A
www.DataSheet4U.com
IFAV = 2x 15 A
VRRM = 1200 V
trr = 40 ns
VRSM
V
1200
VRRM
V
1200
Type
DSEC 30-12A
TO-247 AD
ACA
A
C
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
IFRMS
IFAVM
IFSM
EAS
IAR
TVJ
TVJM
Tstg
Ptot
Md
Weight
Conditions
TC = 125°C; rectangular, d = 0.5
TVJ = 45°C; tp = 10 ms (50 Hz), sine
TVJ = 25°C; non-repetitive
IAS = 9 A; L = 180 µH
VA = 1.25·VR typ.; f = 10 kHz; repetitive
TC = 25°C
mounting torque
typical
Maximum Ratings
50 A
15 A
90 A
8.7 mJ
0.9
-55...+175
175
-55...+150
95
0.8...1.2
6
A
°C
°C
°C
W
Nm
g
Symbol
IR x
VF y
RthJC
RthCH
trr
IRM
Conditions
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
IF = 15 A; TVJ = 150°C
TVJ = 25°C
IF = 1 A; -di/dt = 100 A/ms;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 25 A; -diF/dt = 100 A/ms
TVJ = 100°C
Characteristic Values
typ. max.
100 mA
0.5 mA
1.78 V
2.74 V
1.6 K/W
0.25 K/W
40 ns
4.5 A
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 %
y Pulse Width = 300 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
Features
q International standard package
q Planar passivated chips
q Very short recovery time
q Extremely low switching losses
q Low IRM-values
q Soft recovery behaviour
q Epoxy meets UL 94V-0
Applications
q Antiparallel diode for high frequency
switching devices
q Antisaturation diode
q Snubber diode
q Free wheeling diode in converters
and motor control circuits
q Rectifiers in switch mode power
supplies (SMPS)
q Inductive heating
q Uninterruptible power supplies (UPS)
q Ultrasonic cleaners and welders
Advantages
q Avalanche voltage rated for reliable
operation
q Soft reverse recovery for low
EMI/RFI
q Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
1-2

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