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LC801 の電気的特性と機能
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LC801のメーカーはPolyfet RF Devicesです、この部品の機能は「SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR」です。 |
製品の詳細 ( Datasheet PDF )
| 部品番号 | LC801 |
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| 部品説明 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | ||
| メーカ | Polyfet RF Devices | ||
| ロゴ |  |
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このページの下部にプレビューとLC801ダウンロード（pdfファイル）リンクがあります。 Total 2 pages
polyfet rf devices
LC801
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Militry Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
input impedance and high efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
20.0 Watts Single Ended
Package Style AC
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
Total
Device
Dissipation
50 Watts
Junction to
Case Thermal
Resistance
o
3.40 C/W
ABSOLUTE MAXIMUM RATINGS ( T = 25 oC )
Maximum
Junction
Temperature
200 oC
Storage
Temperature
oo
-65 C to 150 C
DC Drain
Current
3.0 A
Drain to
Gate
Voltage
70 V
Drain to
Source
Voltage
70 V
Gate to
Source
Voltage
20 V
RF CHARACTERISTICS ( 20.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
η Drain Efficiency
13
55
dB Idq = 0.40 A, Vds = 28.0 V, F = 500MHz
% Idq = 0.40 A, Vds = 28.0 V, F = 500 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.40 A, Vds = 28.0 V, F = 500MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss
Idss
Drain Breakdown Voltage
Zero Bias Drain Current
65 V Ids = 0.10 mA, Vgs = 0V
1.0 mA
Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Current
1 uA
Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current
1
7V
Ids = 0.10 A, Vgs = Vds
gM Forward Transconductance
0.8 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
0.90
Ohm
Vgs = 20V, Ids = 2.50 A
Idsat
Saturation Current
5.50 Amp Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance
30.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
1.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance
15.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 05/01/2001
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
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| ページ | 合計 : 2 ページ | ||
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PDF ダウンロード | [ LC801 データシート.PDF ] | |
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
共有リンク
Link :| 部品番号 | 部品説明 | メーカ |
| LC80 | Zener Diode ( Rectifier ) |  Microsemi Corporation |
| LC801 | SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | Polyfet RF Devices |
| LC80101M | VICS LSI |  Sanyo Semicon Device |
| LC80A | Zener Diode ( Rectifier ) | Microsemi Corporation |