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IXFN106N20 の電気的特性と機能

IXFN106N20のメーカーはIXYS Corporationです、この部品の機能は「HiPerFET Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFN106N20
部品説明 HiPerFET Power MOSFETs
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFN106N20 Datasheet, IXFN106N20 PDF,ピン配置, 機能
www.DataSheet4U.com
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
I
D80
I
DM
I
AR
EAR
dv/dt
PD
T
J
TJM
Tstg
TL
VISOL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C, Chip capability
T
C
= 80°C, limited by external leads
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS t = 1 min
I
ISOL
£
1
mA
t=1s
Mounting torque
Terminal connection torque
IXFK 90 N 20
IXFN 100 N 20
IXFN 106 N 20
Maximum Ratings
IXFK
IXFN IXFN
90N20 100N20 106N20
200 200 200 V
200 200 200 V
±20 ±20 20 V
±30 ±30 20 V
90 
76
360
50
100 106 A
-A
400 424 A
50 A
30 30 30 mJ
5 5 5 V/ns
500 520 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 - °C
- 2500
- 3000
V~
V~
0.9/6
-
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
10 30 g
Symbol
VDSS
VGH(th)
IGSS
IDSS
R
DS(on)
Test Conditions
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 8 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
VGS = 0 V
V = 10 V, I = 0.5 • I
GS D D25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
200
2
TJ = 25°C
TJ = 125°C
V
4V
±200 nA
400 mA
2 mA
IXFK90N20
IXFN100N20
IXFN106N20
0.023
0.023
0.020
W
W
W
V
DSS
I
D25
200 V 90 A
200 V 100 A
200 V 106 A
trr £ 200 ns
TO-264 AA
TO-264 AA (IXFK)
R
DS(on)
23 mW
23 mW
20 mW
G
D
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
DG
(TAB)
G
S
S
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
l International standard packages
q JEDEC TO-264 AA, epoxy meet
UL94V-0, flammability classification
q miniBLOC with Aluminium nitride
isolation
q Low R HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Unclamped Inductive Switching (UIS)
rated
q Low package inductance
q Fast intrinsic Rectifier
Applications
q DC-DC converters
q Synchronous rectification
q Battery chargers
q Switched-mode and resonant-mode
power supplies
q DC choppers
q Temperature and lighting controls
q Low voltage relays
Advantages
q Easy to mount
q Space savings
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92804H (7/97)
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IXFN106N20 pdf, ピン配列
IXFK100N20
IXFN90N20 IXFN106N20
www.DataSheet4U.com
Fig. 1 Output Characteristics
200
180
160 TJ = 25°C
VGS = 10V
9V
8V
7V
140
120
6V
100
80
60
40 5V
20
0
0 1 2 3 4 5 6 7 8 9 10
VDS - Volts
Fig. 2 Input Admittance
200
180
160
140
120 TJ = 25°C
100
80
60
40
20
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Volts
Fig. 3 RDS(on) vs. Drain Current
2.6
TJ = 25°C
2.4
2.2
2.0
1.8
VGS = 10V
1.6
1.4
1.2
VGS = 15V
1.0
0.8
0
50 100 150 200 250 300
350
ID - Amperes
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
2.00
1.75
1.50
ID = 53A
1.25
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 5 Drain Current vs.
Case Temperature
120
106N20
100
80 90N20
60
40
20
0
-50 -25
0 25 50 75 100 125 150
TC - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
VGS(th)
1.1
BVDSS
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
© 2000 IXYS All rights reserved
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部品番号部品説明メーカ
IXFN106N20

HiPerFET Power MOSFETs

IXYS Corporation
IXYS Corporation


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