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Número de pieza | UPDS1045 | |
Descripción | 10 Amp Schottky Barrier Rectifier PowerDI 5 | |
Fabricantes | Microsemi Corporation | |
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No Preview Available ! SCOTTSDALE DIVISION
UPDS1045
10 Amp Schottky BarriewrwRwe.DcattiafiSehreet4U.com
PowerDI™ 5
DESCRIPTION
The UPDS1045 offers a small and powerful surface mount package for a
45 Volt 10 Amp rated Schottky with very low forward voltage and low
leakage current. For critical applications requiring very fast switching,
these Schottky higher reverse voltage ratings with their “hot carrier”
features provide extremely fast switching to replace conventional ultrafast
rectifiers. The very low thermal resistance of the PowerDI™5 package
design permits cooler operating junction temperatures for minimal reverse
leakage currents and lower power loss.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
APPEARANCE
PowerDI™5
FEATURES
• Guard ring die construction for transient protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low reverse leakage current
• High junction temperature capability
• High forward surge current capability
• Environmentally friendly molding compound (no Br, Sb)
• Low inductive parasitics for minimal Ldi/dt effects
• Lead-Free Finish & RoHS Compliant per EU Directive Rev
13.2.2003 (glass and high temperature solder exemptions
per Annex Notes 5 and 7 therein)
MAXIMUM RATINGS
• Junction and Storage Temperature (TJ, TSTG): -65 to
+150oC
• Average Rectified Output Current (IO): 10 Amps for Single
phase, half wave, 60Hz, resistive or inductive load (also
see Figure 5). For capacitive load, derate current by 20%.
• Peak Repetitive Reverse Voltage (VRRM): 45 V Working
Peak Reverse Voltage (VRWM): 45 V
DC Blocking Voltage (VR): 45 V
• RMS Reverse Voltage (VR(RMS): 32 V
• Non-Repetitive Peak Forward Surge Current @ 8.3 ms
Single half sine-wave Superimposed on Rated Load
(IFSM): 275A
• Thermal Resistance Junction to case bottom (RθJC) or
Soldering Point (RθJS): 0.8oC/W
• Thermal Resistance (RθJA): 85oC/W (Note 1), 70oC/W
(Note 2), 40oC/W (Note 3) junction to ambient air (see last
page)
Notes: 1. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout (pg 4)
2. Polyimide PCB, 2 oz. Copper, minimum recommended pad layout (pg 4)
3. Polyimide PCB, 2 oz. Copper with larger Cathode pad dimensions
13.2 mm x 10.1 mm and Anode pad dimensions 4.0 mm x 2.2 mm
APPLICATIONS / BENEFITS
• Silicon Schottky (hot carrier) rectifier for minimal
trr and elimination of reverse-recovery oscillations
to reduce need for EMI filtering
• For use in high-frequency switching power
supplies, inverters, free wheeling, polarity
protection, and “O-Ring” applications
• Low power loss and high efficiency
• Robust package configuration for pick-and-place
handling
• Full-metallic bottom eliminates flux entrapment
MECHANICAL AND PACKAGING
• Case Material: Molded Plastic, Environmentally
Friendly “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture sensitivity: Level 1 per J-STD-020C.
• Terminals: Finish – Matte Tin annealed over
Copper lead frame (
per JESD97)
Solderable per MIL-STD-202, Method 208
• Marking: See marking information on page 3
• Polarity: See diagram in “Dimensions &
Schematic” (page 4)
• Weight: 0.096 grams (approx.)
• Tape & Reel Option: 5000/reel (13”)
Copyright © 2005
8-18-2005 REV 0
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet UPDS1045.PDF ] |
Número de pieza | Descripción | Fabricantes |
UPDS1045 | 10 Amp Schottky Barrier Rectifier PowerDI 5 | Microsemi Corporation |
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