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PDF IXTQ62N15P Data sheet ( Hoja de datos )
| Número de pieza | IXTQ62N15P | |
| Descripción | PolarHT Power MOSFET | |
| Fabricantes | IXYS Corporation | |
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PolarHTTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA 62N15P
IXTP 62N15P
IXTQ 62N15P
www.DataSheet4U.com
VDSS =
ID25 =
≤RDS(on)
150
62
40
V
A
mΩ
TO-263 (IXTA)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
TJ ≤150° C, RG = 10 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-3P / TO-220)
TO-3P
TO-220
TO-263
150 V
150 V
GS
±20 V
±30 V TO-220 (IXTP)
62 A
150 A
50 A
30 mJ
G DS
1.0 J
TO-3P (IXTQ)
10 V/ns
(TAB)
(TAB)
350 W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300 °C
2600
°C
1.13/10 Nm/lb.in.
5.5 g
4g
3g
G
DS
G = Gate
S = Source
Features
(TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
150 V
VGS(th)
VDS = VGS, ID = 250µA
3.0 5.5 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
33 40 m Ω
l International standard packages
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99154E(12/05)
1 page  
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
1
IXTA 62N15P IXTP 62N15P
IXTQ 62N15P
www.DataSheet4U.com
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
10 100
Pu ls e W id th - millis e c o n d s
1000
© 2006 IXYS All rights reserved
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTQ62N15P.PDF ] | |
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