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IRF6655 の電気的特性と機能

IRF6655のメーカーはInternational Rectifierです、この部品の機能は「DirectFET Power MOSFET Typical values」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF6655
部品説明 DirectFET Power MOSFET Typical values
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRF6655 Datasheet, IRF6655 PDF,ピン配置, 機能
l RoHS compliant containing no lead or bromide 
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible 
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Ideal for Control FET sockets in 36V – 75V in
Synchronous Buck applications
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques 
PD - 96926D
IRF6655www.DataSheet4U.com
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
100V max ±20V max 53m@ 10V
Qg tot
Qgd
Vgs(th)
8.7nC
2.8nC
3.9V
SH DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST SH MQ MX MT MN
Description
The IRF6655 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF6655 is optimized for low power primary side bridge topologies in isolated DC-DC applications, and for high side control FET sockets in
non-isolated synchronous buck DC-DC applications for use in wide range universal Telecom systems (36V – 75V), and for secondary side
synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal perfor-
mance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high
performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
100 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
hContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
kContinuous Drain Current, VGS @ 10V
ePulsed Drain Current
fSingle Pulse Avalanche Energy
ÃeAvalanche Current
±20
4.2
3.4 A
19
34
11 mJ
5.0 A
200
180 ID = 5.0A
160
140
120
100
TJ = 125°C
80
60
40
20
TJ = 25°C
0
4 6 8 10 12 14 16 18
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET MOSFETs
ƒ Repetitive rating; pulse width limited by max. junction temperature.
www.irf.com
12.0
10.0
ID= 5.0A
VDS= 80V
VDS= 50V
8.0 VDS= 20V
6.0
4.0
2.0
0.0
0
2468
QG Total Gate Charge (nC)
Fig 2. Typical On-Resistance Vs. Gate Voltage
10
„ Starting TJ = 25°C, L = 0.89mH, RG = 25, IAS = 5.0A.
† Surface mounted on 1 in. square Cu board, steady state.
‰ TC measured with thermocouple mounted to top (Drain) of part.
1
11/16/05

1 Page





IRF6655 pdf, ピン配列
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
TSTG
hPower Dissipation
hPower Dissipation
kPower Dissipation
Parameter
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
hlJunction-to-Ambient
ilJunction-to-Ambient
jlJunction-to-Ambient
klJunction-to-Case
Junction-to-PCB Mounted
IRF6655
www.DataSheet4U.com
Max.
2.2
1.4
42
270
-40 to + 150
Units
W
°C
Typ.
–––
12.5
20
–––
1.4
Max.
58
–––
–––
3.0
–––
Units
°C/W
100
D = 0.50
10
1
0.1
0.01
1E-006
0.20
0.10
0.05
0.02
0.01
τJ τJ
τ1 τ1
R 1R 1
SINGLE PULSE
CiC= iτ=iRi/iRi
( THERMAL RESPONSE )
R 2R 2
τ2 τ2
1E-005
0.0001
0.001
0.01
R 3R 3
R 4R 4
R5R5
Ri (°C/W) τi (sec)
1.6195 0.000126
τ3 τ3
τ4 τ4
τ5 τ5
τAτA
2.1406
22.2887
20.0457
0.001354
0.375850
7.410000
11.9144 99
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
† Surface mounted on 1 in. square Cu board, steady state.
‡ Used double sided cooling , mounting pad.
ˆ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
‰ TC measured with thermocouple incontact with top (Drain) of part.
Š Rθ is measured at TJ of approximately 90°C.
† Surface mounted on 1 in. square Cu
board (still air).
www.irf.com
‡ Mounted to a PCB with a
thin gap filler and heat sink.
(still air)
ˆ Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3


3Pages


IRF6655 電子部品, 半導体
IRF6655
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
15V
VDS
L
RG
2V0GVS
tp
D.U.T
IAS
0.01
DRIVER
+
-
VDD A
Fig 16a. Unclamped Inductive Test Circuit
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Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 15b. Gate Charge Waveform
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
VGS
RG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
D.U.T.
+
-
VDD
Fig 17a. Switching Time Test Circuit
6
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 17b. Switching Time Waveforms
www.irf.com

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