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IRF6655のメーカーはInternational Rectifierです、この部品の機能は「DirectFET Power MOSFET Typical values」です。 |
部品番号 | IRF6655 |
| |
部品説明 | DirectFET Power MOSFET Typical values | ||
メーカ | International Rectifier | ||
ロゴ | |||
このページの下部にプレビューとIRF6655ダウンロード(pdfファイル)リンクがあります。 Total 10 pages
l RoHS compliant containing no lead or bromide
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Ideal for Control FET sockets in 36V – 75V in
Synchronous Buck applications
l Low Conduction Losses
l Compatible with existing Surface Mount Techniques
PD - 96926D
IRF6655www.DataSheet4U.com
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
100V max ±20V max 53mΩ@ 10V
Qg tot
Qgd
Vgs(th)
8.7nC
2.8nC
3.9V
SH DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST SH MQ MX MT MN
Description
The IRF6655 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF6655 is optimized for low power primary side bridge topologies in isolated DC-DC applications, and for high side control FET sockets in
non-isolated synchronous buck DC-DC applications for use in wide range universal Telecom systems (36V – 75V), and for secondary side
synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal perfor-
mance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high
performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
100 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
hContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
kContinuous Drain Current, VGS @ 10V
ePulsed Drain Current
fSingle Pulse Avalanche Energy
ÃeAvalanche Current
±20
4.2
3.4 A
19
34
11 mJ
5.0 A
200
180 ID = 5.0A
160
140
120
100
TJ = 125°C
80
60
40
20
TJ = 25°C
0
4 6 8 10 12 14 16 18
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs
Repetitive rating; pulse width limited by max. junction temperature.
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12.0
10.0
ID= 5.0A
VDS= 80V
VDS= 50V
8.0 VDS= 20V
6.0
4.0
2.0
0.0
0
2468
QG Total Gate Charge (nC)
Fig 2. Typical On-Resistance Vs. Gate Voltage
10
Starting TJ = 25°C, L = 0.89mH, RG = 25Ω, IAS = 5.0A.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
1
11/16/05
1 Page Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
TSTG
hPower Dissipation
hPower Dissipation
kPower Dissipation
Parameter
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
hlJunction-to-Ambient
ilJunction-to-Ambient
jlJunction-to-Ambient
klJunction-to-Case
Junction-to-PCB Mounted
IRF6655
www.DataSheet4U.com
Max.
2.2
1.4
42
270
-40 to + 150
Units
W
°C
Typ.
–––
12.5
20
–––
1.4
Max.
58
–––
–––
3.0
–––
Units
°C/W
100
D = 0.50
10
1
0.1
0.01
1E-006
0.20
0.10
0.05
0.02
0.01
τJ τJ
τ1 τ1
R 1R 1
SINGLE PULSE
CiC= iτ=i/τRi/iRi
( THERMAL RESPONSE )
R 2R 2
τ2 τ2
1E-005
0.0001
0.001
0.01
R 3R 3
R 4R 4
R5R5
Ri (°C/W) τi (sec)
1.6195 0.000126
τ3 τ3
τ4 τ4
τ5 τ5
τAτA
2.1406
22.2887
20.0457
0.001354
0.375850
7.410000
11.9144 99
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
TC measured with thermocouple incontact with top (Drain) of part.
Rθ is measured at TJ of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
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Mounted to a PCB with a
thin gap filler and heat sink.
(still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
3Pages IRF6655
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
15V
VDS
L
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD A
Fig 16a. Unclamped Inductive Test Circuit
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Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 15b. Gate Charge Waveform
V(BR)DSS
tp
IAS
Fig 16b. Unclamped Inductive Waveforms
VDS
VGS
RG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
D.U.T.
+
-
VDD
Fig 17a. Switching Time Test Circuit
6
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 17b. Switching Time Waveforms
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6 Page | |||
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部品番号 | 部品説明 | メーカ |
IRF6655 | DirectFET Power MOSFET Typical values | International Rectifier |
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