DataSheet.jp

4953GM PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 4953GM
部品説明 AP4953GM
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 

Total 5 pages
		

No Preview Available !

4953GM Datasheet, 4953GM PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
www.DataSheet4U.com
AP4953GM
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low Gate Charge
Fast Switching
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G1
BVDSS
RDS(ON)
ID
D1
G2
S1
-30V
53mΩ
-5A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
PD@TA=25
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Rating
- 30
+20
-5
-4
- 20
2
0.016
-55 to 150
-55 to 150
Value
62.5
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
1
200810075

1 Page





ページ 合計 : 5 ページ
PDF
ダウンロード
[ 4953GM.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
4953GM

There is a function of AP4953GM.

Advanced Power Electronics
Advanced Power Electronics

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap