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PDF IXFV26N60P Data sheet ( Hoja de datos )
| Número de pieza | IXFV26N60P | |
| Descripción | N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated | |
| Fabricantes | IXYS Corporation | |
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PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
AAddvvaanncceeTTeecchhnnicicaal lInInfoforrmmaatitoionn
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IXFH 26N60P
IXFQ 26N60P
IXFT 26N60P
IXFV 26N60P
IXFV 26N60PS
VDSS = 600 V
ID25 = 26 A
RDS(on) ≤ 270 mΩ
trr ≤ 200 ns
TO-247 (IXFH)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 5 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body
Mounting torque (TO-3P&TO-247)
Mounting force (PLUS220)
TO-3P
TO-248
TO-268
PLUS220 & PLUS220SMD
Maximum Ratings
600 V
600 V
±30 V
±40 V
26 A
65 A
26 A
40 mJ
1.2 J
10 V/ns
460 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
250 °C
1.13/10 Nm/lb.in.
11..65/2.5..15
N/lb
5.5 g
6.0 g
5.0 g
4.0 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS VGS = ±30 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Characteristic Values
Min. Typ. Max.
600 V
2.5 5.0 V
±100 nA
25 µA
250 µA
270 m Ω
© 2005 IXYS All rights reserved
G
DS
TO-3P (IXFQ)
G
D
S
TO-268 (IXFT)
D (TAB)
G
S
PLUS220 (IXFV)
D (TAB)
G
D
S
PLUS220SMD (IXFV_S)
D (TAB)
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
z Fast Recovery diode
z Unclamped Inductive Switching (UIS)
rated
z International standard packages
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
DS99435(08/05)
1 page  
TO-3P (IXFQ) Outline
IXFV 26N60P
TO-247 AD (IXFH) Outline
IXFH 26N60P IXFQ 26N60P
IXFV 26N60PS IXFT 26N60P
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TO-268 (IXFT) Outline
12 3
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220 (IXFV) Outline
PLUS220SMD (IXFV_S)
E
E1
L2
A
A1
E1
EA
E1 L2 A1
E1
L1
2X e
D
L3
L
3X b c
A2
D1
D
L3
L
L1
2X b
e
c
A2
A3
L4
Terminals: 1 - Gate
2 - Drain
3 - Source TAB - Drain
A
A1
A2
b
c
D
D1
E
E1
e
L
L1
L2
L3
© 2005 IXYS All rights reserved
Terminals:
1 - Gate
2 - Drain
3 - Source
4 (TAB) - Drain
A
A1
A2
A3
b
c
D
D1
E
E1
e
L
L1
L2
L3
L4
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXFV26N60P.PDF ] | |
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