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IXTT52N30P の電気的特性と機能

IXTT52N30PのメーカーはIXYS Corporationです、この部品の機能は「PolarHT Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTT52N30P
部品説明 PolarHT Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXTT52N30P Datasheet, IXTT52N30P PDF,ピン配置, 機能
PolarHTTM
Power MOSFET
N-Channel Enhancement Mode
Advanced Technical Information
www.DataSheet4U.com
IXTQ52N30P
IXTT52N30P
VDSS
ID25
RDS(on)
= 300 V
= 52 A
= 66 m
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-3P)
TO-3P
TO-268
300 V
300 V
±20 V
±30 V
52 A
150 A
52 A
30 mJ
1.0 J
10 V/ns
400 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
5.5 g
5.0 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
300 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
57 66 m
TO-3P (IXTQ)
G
CE
(TAB)
TO-268 (IXTT)
GS
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99115A(10/04)

1 Page





IXTT52N30P pdf, ピン配列
55
50
45
40
35
30
25
20
15
10
5
0
0
Fig. 1. Output Characteristics
@ 25 Deg. C
VGS = 10V
8V
7V
6V
5V
0.5 1 1.5 2 2.5 3 3.5 4 4.5
VD S - Volts
5
55
50
45
40
35
30
25
20
15
10
5
0
0
Fig. 3. Output Characteristics
@ 125 Deg. C
VGS = 10V
8V
7V
6V
5V
1 2 3 4 5 6 7 8 9 10
VD S - Volts
Fig. 5. RDS(on) Norm alize d to ID25
Value vs. ID
3.8
3.4 VGS = 10V
3
2.6
2.2 TJ = 125ºC
1.8
1.4
1 TJ = 25ºC
0.6
0
25 50 75 100 125 150
I D - Amperes
© 2004 IXYS All rights reserved
IXTQ 52N30P
IXTT 52N30P
www.DataSheet4U.com
Fig. 2. Extended Output Characteristics
@ 25 deg. C
150
VGS = 10V
9V
125
100 8V
75 7V
50
6V
25
5V
0
0 5 10 15 20 25
VD S - Volts
Fig. 4. RDS(on) Norm alize d to ID25 Value vs .
Junction Tem perature
3
2.8 VGS = 10V
2.6
2.4
2.2
2
1.8 ID = 52A
1.6 ID = 26A
1.4
1.2
1
0.8
0.6
0.4
-50 -25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
55
50
45
40
35
30
25
20
15
10
5
0
-50
Fig. 6. Drain Current vs. Case
Tem perature
-25 0 25 50 75 100 125 150
TC - Degrees Centigrade


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部品番号部品説明メーカ
IXTT52N30P

PolarHT Power MOSFET

IXYS Corporation
IXYS Corporation


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