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IRHMB53Z60 の電気的特性と機能

IRHMB53Z60のメーカーはInternational Rectifierです、この部品の機能は「RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRHMB53Z60
部品説明 RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRHMB53Z60 Datasheet, IRHMB53Z60 PDF,ピン配置, 機能
www.DataSheet4U.com
PD-96973
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level
IRHMB57Z60 100K Rads (Si)
IRHMB53Z60 300K Rads (Si)
IRHMB54Z60 600K Rads (Si)
IRHMB58Z60 1000K Rads (Si)
RDS(on)
0.0045
0.0045
0.0045
0.0045
ID
45A*
45A*
45A*
45A*
IRHMB57Z60
30V, N-CHANNEL
5 TECHNOLOGY
™
Tabless
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
45*
45* A
180
208 W
1.67
W/°C
±20 V
1250
mJ
45 A
20.8
mJ
1.08
-55 to 150
V/ns
oC
300 (0.063 in. /1.6 mm from case for 10s)
8.0 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
03/08/05

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IRHMB53Z60 pdf, ピン配列
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PRraed-IirartaiodniaCtiohnaracteristics
IRHMB57Z60
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Test Conditions
Min Max Min Max
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source On-State Ã
Resistance (Low-Ohmic TO-254)
30 —
2.0 4.0
30 —
V
1.5 4.0
— 100
— -100
— 100 nA
— -100
— 10 — 25 µA
0.0040 0.0045
— 0.0045 — 0.0050
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 24V, VGS = 0V
VGS =12V, ID = 45A
VGS =12V, ID = 45A
VSD Diode Forward Voltage Ã
— 1.2 — 1.2 V
VGS = 0V, IS = 45A
1. Part numbers IRHMB57Z60 , IRHMB53Z60 and IRHMB54Z60
2. Part number IRHMB58Z60
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
MeV/(mg/cm2))
Cu 28
Br 37
I 60
Energy
(MeV)
261
285
344
Range
(µm)
40
37
33
@VGS=0V @VGS=-5V
30 30
30 30
25 25
VDS (V)
@VGS=-10V
30
30
20
@VGS=-15V
25
23
15
@VGS=-20V
15
15
8
35
30
25
20
15
10
5
0
0
Cu
Br
I
-5 -10 -15 -20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3


3Pages


IRHMB53Z60 電子部品, 半導体
www.DataSheet4U.com
IRHMB57Z60
Pre-Irradiation
160
LIMITED BY PACKAGE
120
80
40
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1 1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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部品番号部品説明メーカ
IRHMB53Z60

RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

International Rectifier
International Rectifier


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