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IRHMB57064 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRHMB57064
部品説明 RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRHMB57064 Datasheet, IRHMB57064 PDF,ピン配置, 機能
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PD-96972
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Tabless - Low-Ohmic TO-254AA)
IRHMB57064
60V, N-CHANNEL
5 TECHNOLOGY
™
Product Summary
Part Number
IRHMB57064
IRHMB53064
IRHMB54064
IRHMB58064
Radiation Level
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
1000K Rads (Si)
RDS(on)
0.006
0.006
0.006
0.006
ID
45A*
45A*
45A*
45A*
Tabless
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
45*
45* A
180
208 W
1.67
W/°C
±20 V
824 mJ
45 A
20 mJ
4.3
-55 to 150
V/ns
oC
300 (0.063 in. /1.6 mm from case for 10s)
8.0 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
03/08/05

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IRHMB57064

RADIATION HARDENED POWER MOSFET THRU-HOLE (Tabless - Low-Ohmic TO-254AA)

International Rectifier
International Rectifier

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