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PDF IXTK180N15 Data sheet ( Hoja de datos )
| Número de pieza | IXTK180N15 | |
| Descripción | High Current MegaMOSTMFET | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Advance Technical Information
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High Current
MegaMOSTMFET
N-Channel Enhancement Mode
IXTK 180N15
V
DSS
ID25
R
DS(on)
=
=
=
150 V
180 A
10 mΩ
Symbol Test conditions
VDSS
VDGR
VGS
VGSM
ID25
I
D(RMS)
IDM
I
AR
EAR
E
AS
dv/dt
PD
TJ
T
JM
Tstg
TL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1.0 MΩ
Continuous
Transient
TC = 25°C MOSFET chip capability
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Maximum ratings
150 V
150 V
±20 V
±30 V
180 A
75 A
720 A
90 A
64 mJ
3.0 J
5 V/ns
TO-264 AA (IXTK)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
Tab = Drain
560
-55 ... +150
150
-55 ... +150
300
0.7/6
10
W
°C
°C
°C
°C
Nm/lb.in.
g
Features
•
•
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
• Internationalstandardpackage
• Fastswitchingtimes
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 1 mA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ±20 V DC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
R
DS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
Characteristic Values
Min. Typ.
Max.
150 V
2.0 4.0 V
±200 nA
50 µA
3 mA
10 mΩ
Applications
• Motorcontrols
• DC choppers
• Switched-mode power supplies
Advantages
• Easy to mount with one screw
(isolated mounting screw hole)
• Space savings
• High power density
© 2002 IXYS All rights reserved
98878A (02/02)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXTK180N15.PDF ] | |
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