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IXTK128N15 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTK128N15
部品説明 High Current Mega MOS FET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXTK128N15 Datasheet, IXTK128N15 PDF,ピン配置, 機能
High Current
Mega MOSTMFET
N-Channel Enhancement Mode
Advance Technical Information
www.DataSheet4U.com
IXTK 128N15
VDSS
ID25
RDS(on)
= 150 V
= 128 A
= 15 m
Symbol
V
DSS
VDGR
V
GS
V
GSM
ID25
I
D(RMS)
I
DM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C MOSFET chip capability
External lead current limit
T
C
=
25°C,
pulse
width
limited
by
T
JM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-264
Maximum Ratings
150 V
150 V
±20 V
±30 V
128 A
75 A
512 A
90 A
60 mJ
2.5 J
5 V/ns
540
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
0.7/6 Nm/lb.in.
10 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 1 mA
VGS(th)
VDS = VGS, ID = 250 µA
I
GSS
V
GS
= ±20 V
DC, V = 0
DS
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
Characteristic Values
Min. Typ. Max.
150 V
2.0 4.0 V
±100 nA
50 µA
2 mA
15 m
TO-264 AA (IXTK)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
International standard package
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Fast switching times
Applications
Motor controls
DC choppers
Switched-mode power supplies
Advantages
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
© 2003 IXYS All rights reserved
DS98952(03/03)

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部品番号部品説明メーカ
IXTK128N15

High Current Mega MOS FET

IXYS Corporation
IXYS Corporation

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