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PDF IXTK120N25P Data sheet ( Hoja de datos )
| Número de pieza | IXTK120N25P | |
| Descripción | PolarHT Power MOSFET | |
| Fabricantes | IXYS Corporation | |
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PolarHTTM
Power MOSFET
IXTK 120N25P
N-Channel Enhancement Mode
Avalanche Rated
www.DataSheet4U.com
VDSS =
ID25 =
≤RDS(on)
250 V
120 A
24 m Ω
Symbol
VDSS
VDGR
VGS
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C
External lead current limit
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
TJ ≤150° C, RG = 4 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Maximum Ratings
250 V
250 V
±20 V
±30 V
120 A
75 A
300 A
60 A
60 mJ
2.5 J
10 V/ns
700 W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300 ° C
260 ° C
1.13/10 Nm/lb.in.
10 g
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
250 V
VGS(th)
VDS = VGS, ID = 500µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
19 24 m Ω
TO-264 (IXTK)
G DS
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
l International standard package
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99175E(12/05)
1 page  
1.00
0.10
0.01
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0.1
IXTK 120N25P
www.DataSheet4U.com
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
1 10 100
Pu ls e W id th - m illis e c o n d s
1000
© 2006 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTK120N25P.PDF ] | |
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