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IXTK102N30P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTK102N30P
部品説明 PolarHT Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXTK102N30P Datasheet, IXTK102N30P PDF,ピン配置, 機能
PolarHTTM
Power MOSFET
IXTK 102N30P
N-Channel Enhancement Mode
Avalanche Rated
www.DataSheet4U.com
VDSS = 300
ID25 = 102
RDS(on) 33
V
A
m
Symbol
Test Conditions
Maximum Ratings TO-264 (IXTK)
VDSS
VDGR
VGSS
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 M
Continuous
Transient
TC = 25° C
External lead current limit
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150° C, RG = 4
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-264
300 V
300 V
±20 V
±30 V
102 A G D S
75 A
250 A
(TAB)
60
A G = Gate
D = Drain
60
mJ S = Source
TAB = Drain
2.5 J
10 V/ns Features
700 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 ° C
260 ° C
1.13/10 Nm/lb.in.
10 g
l International standard package
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
300 V
VGS(th)
VDS = VGS, ID = 500µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±200 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
33 m
© 2006 IXYS All rights reserved
DS99130E(12/05)

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PolarHT Power MOSFET

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