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IS61C6416AL の電気的特性と機能

IS61C6416ALのメーカーはIntegrated Silicon Solutionです、この部品の機能は「64K x 16 HIGH-SPEED CMOS STATIC RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS61C6416AL
部品説明 64K x 16 HIGH-SPEED CMOS STATIC RAM
メーカ Integrated Silicon Solution
ロゴ Integrated Silicon Solution ロゴ 




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IS61C6416AL Datasheet, IS61C6416AL PDF,ピン配置, 機能
IS61C6416AL IS64C6416AL
IS62C6416AL IS65C6416AL
ISSI®
www.DataSheet4U.com
64K x 16 HIGH-SPEED CMOS STATIC RAM
JANUARY 2005
FEATURES
IS61C6416AL and IS64C6416AL
• High-speed access time: 12 ns, 15ns
• Low Active Power: 175 mW (typical)
• Low Standby Power: 1 mW (typical)
CMOS standby
IS62C6416AL and IS65C6416AL
• High-speed access time: 35 ns, 45ns
• Low Active Power: 50 mW (typical)
• Low Standby Power: 100 µW (typical)
CMOS standby
• TTL compatible interface levels
• Single 5V ± 10% power supply
• Fully static operation: no clock or refresh
required
• Available in 44-pin SOJ package and
44-pin TSOP (Type II)
• Commercial, Industrial and Automotive tempera-
ture ranges available
• Lead-free available
DESCRIPTION
The ISSI IS61C6416AL, IS62C6416AL, IS64C6416AL and
IS65C6416AL are high-speed, 1,048,576-bit static RAMs
organized as 65,536 words by 16 bits. They are fabricated
using ISSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design tech-
niques, yields access times as fast as 12 ns with low power
consumption.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS61C6416AL, IS62C6416AL, IS64C6416AL and
IS65C6416AL are packaged in the JEDEC standard 44-pin
400-mil SOJ and 44-pin TSOP (Type II).
FUNCTIONAL BLOCK DIAGRAM
A0-A15
DECODER
64K x 16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
01/17/05
1

1 Page





IS61C6416AL pdf, ピン配列
IS61C6416AL IS64C6416AL
IS62C6416AL IS65C6416AL
TRUTH TABLE
Mode
WE CE OE LB UB
Not Selected
XHXXX
Output Disabled H L H X X
X LXHH
Read
HL L LH
HL LHL
HL L L L
Write
L LXLH
L LXHL
L LXL L
ISSI ®
www.DataSheet4U.com
I/O PIN
I/O0-I/O7 I/O8-I/O15
High-Z
High-Z
High-Z
DOUT
High-Z
DOUT
DIN
High-Z
DIN
High-Z
High-Z
High-Z
High-Z
DOUT
DOUT
High-Z
DIN
DIN
VDD Current
ISB1, ISB2
ICC1, ICC2
ICC1, ICC2
ICC1, ICC2
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND
–0.5 to +7.0
V
TSTG
Storage Temperature
–65 to +150
°C
PT Power Dissipation
1.5 W
IOUT DC Output Current (LOW)
20 mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
OPERATING RANGE (IS61C/62C6416AL)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
VDD
5V ± 10%
5V ± 10%
OPERATING RANGE (IS64C/65C6416AL)
Range
Ambient Temperature VDD
Automotive -40°C to +125°C
5V ± 10%
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
01/17/05
3


3Pages


IS61C6416AL 電子部品, 半導体
IS61C6416AL IS64C6416AL
IS62C6416AL IS65C6416AL
ISSI ®
www.DataSheet4U.com
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol
tRC
Parameter
Read Cycle Time
-12
Min. Max.
12 —
-15
Min. Max.
15 —
-35
Min. Max.
35 —
-45
Min. Max.
45 —
Unit
ns
tAA Address Access Time
— 12
— 15
— 35
— 45
ns
tOHA
tACE
tDOE
tHZOE(2)
tLZOE(2)
tHZCE(2
tLZCE(2)
tBA
tHZB
tLZB
Output Hold Time
CE Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CE to High-Z Output
CE to Low-Z Output
LB, UB Access Time
LB, UB to High-Z Output
LB, UB to Low-Z Output
3—
— 12
—6
06
0—
07
2—
—6
06
0—
3—
— 15
—7
06
0—
08
2—
—6
07
0—
3—
— 35
— 10
0 10
3—
0 10
3—
— 35
0 10
0—
3—
— 45
— 20
0 15
5—
0 15
5—
— 45
0 15
0—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0
to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
AC TEST LOADS
480
5V
OUTPUT
30 pF
Including
jig and
scope
Figure 1
255
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
480
5V
OUTPUT
5 pF
Including
jig and
scope
Figure 2
255
6 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
01/17/05

6 Page



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部品番号部品説明メーカ
IS61C6416AL

64K x 16 HIGH-SPEED CMOS STATIC RAM

Integrated Silicon Solution
Integrated Silicon Solution


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