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IXFR44N80P の電気的特性と機能

IXFR44N80PのメーカーはIXYS Corporationです、この部品の機能は「PolarHV HiPerFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFR44N80P
部品説明 PolarHV HiPerFET Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFR44N80P Datasheet, IXFR44N80P PDF,ピン配置, 機能
PolarHVTM HiPerFET
Power MOSFET
Electrically Isolated Tab
IXFR 44N80P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
www.DataSheet4U.com
VDSS = 800 V
ID25 = 25 A
RDS(on) 190 mΩ
trr 250 ns
Symbol
VDSS
V
DGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
T
J
TJM
Tstg
TL
T
SOLD
VISOL
F
C
Weight
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/μs, VDD VDSS,
TJ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
50/60 Hz, RMS, 1 minute
Mounting force
Maximum Ratings
800
800
± 30
± 40
25
100
25
80
3.4
V
V
V
V
A
A
A
mJ
J
10 V/ns
300
-55 ... +150
150
-55 ... +150
300
260
2500
20..120 /4.5..25
5
W
°C
°C
°C
°C
°C
V~
N/lb
g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 800 μA
V
GS(th)
V = V , I = 8 mA
DS GS D
IGSS VGS = ± 30 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT, Note 1
Characteristic Values
Min. Typ. Max.
800 V
3.0 5.0 V
± 200 nA
TJ = 125°C
50 μA
1.5 mA
200 mΩ
© 2006 IXYS All rights reserved
ISOPLUS247 (IXFR)
E153432
Isolated Tab
G = Gate
S = Source
D = Drain
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Low drain to tab capacitance(<30pF)
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
z Fast intrinsic Rectifier
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
Advantages
z Easy assembly
z Space savings
z High power density
DS99504E(06/06)

1 Page





IXFR44N80P pdf, ピン配列
45
40
35
30
25
20
15
10
5
0
0
45
40
35
30
25
20
15
10
5
0
0
Fig. 1. Output Characte r is tics
@ 25°C
VGS = 10V
7V
6V
5V
12 3 45 67
V D S - V olts
Fig. 3. Output Characte r is tics
@ 125°C
VGS = 10V
7V
6V
8
5V
2 4 6 8 10 12 14 16
V D S - V olts
Fig. 5. RDS(on) Nor m alize d to ID = 22A
V alue vs . Drain Curr e nt
2.4
2.2 VGS = 10V
TJ = 125°C
2
1.8
1.6
1.4
1.2
TJ = 25°C
1
0.8
0
10 20 30 40 50 60 70 80 90 100
I D - A mperes
© 2006 IXYS All rights reserved
IXFR 44N80P
Fig. 2. Exte nde d Outpwuwt Cw.hDaartaacShteeer its4Uti.ccsom
@ 25°C
100
90 VGS = 10V
7V
80
70
60
50 6V
40
30
20 5V
10
0
0 3 6 9 12 15 18 21 24 27 30
V D S - V olts
Fig. 4. RDS(on) Nor m alize d to ID = 22A
Value vs . Junction Te m pe rature
2.6
2.4 VGS = 10V
2.2
2.0
1.8 ID = 44A
1.6
1.4 ID = 22A
1.2
1.0
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig . 6. Dr ain Cur r e n t vs . Cas e
Te m perature
28
24
20
16
12
8
4
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade


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部品番号部品説明メーカ
IXFR44N80P

PolarHV HiPerFET Power MOSFET

IXYS Corporation
IXYS Corporation


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