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PDF IXFR40N50Q2 Data sheet ( Hoja de datos )
| Número de pieza | IXFR40N50Q2 | |
| Descripción | HiPerFET Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFETs
IXFR40N50Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Qg
Low Rg, High dv/dt, Low trr
Preliminary Data Sheet
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IIADRM
EEAARS
dv/dt
PD
TTJJM
Tstg
TL
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TTCC
=
=
25°C,
25°C
pulse
width
limited
by
TJM
TTCC
= 25°C
= 25°C
TISJ
≤
≤
I1D5M0, °dCi/d, tR≤G
100
=2
A/µs,
Ω
VDD
≤
VDSS,
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting force
Maximum Ratings
500 V
500 V
±30 V
±40 V
29 A
160 A
40 A
50 mJ
2.5 J
20 V/ns
320
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
22...130/5...30 N/lb.
5g
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = ±30 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = IT
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
500
2.5
V
5.0 V
±200 nA
25 µA
1 mA
0.17 Ω
www.DataSheet4U.com
VDSS = 500 V
ID25 = 29 A
RDS(on) = 0.17 Ω
trr ≤ 250 ns
ISOPLUS247 (IXFR)
E153432
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Isolated
Features
z Double metal process for low gate
resistance
z International standard packages
z Epoxy meet UL 94 V-0, flammability
classification
z Low RDS ,(on) low Qg
z Avalanche energy and current rated
z Fast intrinsic rectifier
Applications
z DC-DC converters
z Switched-mode and resonant-mode
power supplies, >500kHz switching
z DC choppers
z Pulse generation
z Laser drivers
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99075B(05/04)
1 page  
1.00
0.10
0.01
0.00
0.1
IXFR40N50Q2
www.DataSheet4U.com
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
1
10
100
1000
10000
Pu ls e W id th - millis e c o n d s
© 2004 IXYS All rights reserved
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