PDF IS61NLP204818A Data sheet ( Hoja de datos )

Número de pieza	IS61NLP204818A
Descripción	1Mb x 36 and 2Mb x 18 STATE BUS SRAM
Fabricantes	Integrated Silicon Solution
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IS61NLP102436A/IS61NVP102436A IS61NLP204818A/IS61NVP204818A www.DataSheet4U.com 1Mb x 36 and 2Mb x 18 36Mb, PIPELINE 'NO WAIT' STATE BUS SRAM SEPTEMBER 2007 FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single R/W (Read/Write) control pin • Clock controlled, registered address, data and control • Interleaved or linear burst sequence control using MODE input • Three chip enables for simple depth expansion and address pipelining • Power Down mode • Common data inputs and data outputs • CKE pin to enable clock and suspend operation • JEDEC 100-pin TQFP and 165-ball PBGA packages • Power supply: NVP: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%) NLP: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%) • Industrial temperature available • Lead-free available DESCRIPTION The 36 Meg 'NLP/NVP' product family feature high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, 'no wait' state, device for networking and communications applications. They are organized as 1M words by 36 bits and 2M words by 18 bits, fabricated with ISSI's advanced CMOS technology. Incorporating a 'no wait' state feature, wait cycles are eliminated when the bus switches from read to write, or write to read. This device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers are controlled by a positive-edge-triggered single clock input. Operations may be suspended and all synchronous inputs ignored when Clock Enable, CKE is HIGH. In this state the internal device will hold their previous values. All Read, Write and Deselect cycles are initiated by the ADV input. When the ADV is HIGH the internal burst counter is incremented. New external addresses can be loaded when ADV is LOW. Write cycles are internally self-timed and are initiated by the rising edge of the clock inputs and when WE is LOW. Separate byte enables allow individual bytes to be written. A burst mode pin (MODE) defines the order of the burst sequence. When tied HIGH, the interleaved burst sequence is selected. When tied LOW, the linear burst sequence is selected. FAST ACCESS TIME Symbol tKQ tKC Parameter Clock Access Time Cycle Time Frequency -200 -166 Units 3.1 3.5 ns 5 6 ns 200 166 MHz Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. Rev. A 09/13/07 1 1 page IS61NLP102436A/IS61NVP102436A IS61NLP204818A/IS61NVP204818A PIN CONFIGURATION 100-Pin TQFP www.DataSheet4U.com DQPc DQc DQc VDDQ Vss DQc DQc DQc DQc Vss VDDQ DQc DQc VDD VDD NC Vss DQd DQd VDDQ Vss DQd DQd DQd DQd Vss VDDQ DQd DQd DQPd 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 10 71 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 DQPb DQb DQb VDDQ Vss DQb DQb DQb DQb Vss VDDQ DQb DQb Vss NC VDD ZZ DQa DQa VDDQ Vss DQa DQa DQa DQa Vss VDDQ DQa DQa DQPa NC NC NC VDDQ Vss NC NC DQb DQb Vss VDDQ DQb DQb VDD VDD NC Vss DQb DQb VDDQ Vss DQb DQb DQPb NC Vss VDDQ NC NC NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 10 71 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 A NC NC VDDQ Vss NC DQPa DQa DQa Vss VDDQ DQa DQa Vss NC VDD ZZ DQa DQa VDDQ Vss DQa DQa NC NC Vss VDDQ NC NC NC 1M x 36 PIN DESCRIPTIONS A0, A1 A CLK ADV BWa-BWd WE CKE Vss NC Synchronous Address Inputs. These pins must tied to the two LSBs of the address bus. Synchronous Address Inputs Synchronous Clock Synchronous Burst Address Advance Synchronous Byte Write Enable Write Enable Clock Enable Ground for Core Not Connected 2M x 18 CE, CE2, CE2 Synchronous Chip Enable OE Output Enable DQa-DQd Synchronous Data Input/Output DQPa-DQPd Parity Data I/O MODE Burst Sequence Selection VDD +3.3V/2.5V Power Supply VSS Ground for output Buffer VDDQ Isolated Output Buffer Supply: +3.3V/2.5V ZZ Snooze Enable Integrated Silicon Solution, Inc. — www.issi.com Rev. A 09/13/07 5 5 Page IS61NLP102436A/IS61NVP102436A IS61NLP204818A/IS61NVP204818A 2.5V I/O AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0V to 2.5V 1.5 ns 1.25V See Figures 3 and 4 2.5V I/O OUTPUT LOAD EQUIVALENT OUTPUT ZO = 50Ω Figure 3 50Ω 1.25V www.DataSheet4U.com +2.5V 1,667 Ω OUTPUT 1,538 Ω 5 pF Including jig and scope Figure 4 Integrated Silicon Solution, Inc. — www.issi.com Rev. A 09/13/07 11 11 Page

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