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PDF IXFT140N10P Data sheet ( Hoja de datos )
| Número de pieza | IXFT140N10P | |
| Descripción | PolarHV HiPerFET Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Information
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PolarHVTM HiPerFET
IXFH 140N10P
IXFT 140N10P
Power MOSFETs
N-Channel Enhancement Mode
Fast Intrinsic Diode; Avalanche Rated
V=
DSS
ID25 =
=RDS(on)
100 V
140 A
11 mΩ
Symbol
VDSS
VDGR
VGSM
ID25
ID(RMS)
I
DM
I
AR
EAR
EAS
dv/dt
P
D
TJ
T
JM
T
stg
TL
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
TC = 25°C
External lead current limit
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
TO-247 (IXFT)
100 V
100 V
±20
V
G
DS
140 A
75 A
300 A
TO-268 (IXFT)
60 A
80 mJ
2.5 J
10 V/ns
G
S
D (TAB)
D (TAB)
600
-55 ... +175
175
-55 ... +150
G = Gate
W S = Source
°C
°C
°C Features
D = Drain
TAB = Drain
300 °C
1.13/10 Nm/lb.in.
6.0 g
5.0 g
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
VDSS
VGS = 0 V, ID = 250 μA
Characteristic Values
Min. Typ. Max.
100 V
VGS(th)
VDS = VGS, ID = 4.0 mA
3.0 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 175°C
25 μA
500 μA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
VGS = 15 V, ID = 300 A
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
11 mΩ
9 mΩ
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99213(02/04)
1 page  
1.00
0.10
0.01
0.1
IXFH 140N10P
www.DIXatFaSThee1t44U.c0oNm10P
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
1 10 100
Pu ls e W id th - m illis e c o n d s
1000
© 2004 IXYS All rights reserved
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