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IXTH6N120のメーカーはIXYS Corporationです、この部品の機能は「High Voltage Power MOSFET」です。 |
部品番号 | IXTH6N120 |
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部品説明 | High Voltage Power MOSFET | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXTH6N120ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
High Voltage
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Preliminary Data Sheet
IXTH 6N120
IXTT 6N120
www.DataSheet4U.com
VDSS
ID25
RDS(on)
= 1200 V
= 6A
= 2.6 Ω
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
Maximum Ratings
1200
1200
±20
±30
6
V
V
V
V
A
24 A
6A
25 mJ
500 mJ
5 V/ns
300
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
TO-247 AD (IXTH)
(TAB)
TO-268 (IXTT) Case Style
G
G = Gate
S = Source
S
D = Drain
TAB = Drain
(TAB)
Features
z International standard packages
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ.
Max.
1200
V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25 µA
500 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2.6 Ω
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99024B(01/04)
1 Page Fig. 1. Output Characteristics
@ 25 Deg. C
6
VGS = 10V
5 9V
8V
4 7V
3 6V
2
1 5V
0
0 2 4 6 8 10 12 14 16
VDS - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
6
VGS = 10V
5 9V
8V
4
7V
6V
3
2
5V
1
0
0 5 10 15 20 25 30
VDS - Volts
Fig. 5. RDS(on) Normalized to ID25
Value vs. ID
2.8
2.5 VGS = 10V
2.2
TJ = 125ºC
1.9
1.6
1.3 TJ = 25ºC
1
0.7
0 1.5 3 4.5 6 7.5 9
ID - Amperes
© 2004 IXYS All rights reserved
IXTH 6N120
IXTT 6N120
www.DataSheet4U.com
Fig. 2. Extended Output Characteristics
@ 25 deg. C
10
VGS = 10V
8 9V
8V
7V
6
4 6V
2
0
0
5V
5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID25 Value vs.
Junction Temperature
3.1
2.8 VGS = 10V
2.5
2.2
1.9
ID = 6A
1.6
1.3 ID= 3A
1
0.7
0.4
-50
-25 0 25 50 75 100 125
TJ - Degrees Centigrade
150
Fig. 6. Drain Current vs. Case
T emperature
7
6
5
4
3
2
1
0
-50
-25 0 25 50 75 100 125
TC - Degrees Centigrade
150
3Pages | |||
ページ | 合計 : 4 ページ | ||
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部品番号 | 部品説明 | メーカ |
IXTH6N120 | High Voltage Power MOSFET | IXYS Corporation |