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IXTH6N120 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTH6N120
部品説明 High Voltage Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXTH6N120 Datasheet, IXTH6N120 PDF,ピン配置, 機能
High Voltage
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Preliminary Data Sheet
IXTH 6N120
IXTT 6N120
www.DataSheet4U.com
VDSS
ID25
RDS(on)
= 1200 V
= 6A
= 2.6
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
Maximum Ratings
1200
1200
±20
±30
6
V
V
V
V
A
24 A
6A
25 mJ
500 mJ
5 V/ns
300
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
TO-247 AD (IXTH)
(TAB)
TO-268 (IXTT) Case Style
G
G = Gate
S = Source
S
D = Drain
TAB = Drain
(TAB)
Features
z International standard packages
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ.
Max.
1200
V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25 µA
500 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
2.6
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99024B(01/04)

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IXTH6N120

High Voltage Power MOSFET

IXYS Corporation
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