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PDF IXTQ69N30P Data sheet ( Hoja de datos )
| Número de pieza | IXTQ69N30P | |
| Descripción | PolarHT Power MOSFET | |
| Fabricantes | IXYS Corporation | |
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PolarHTTM
Power MOSFET
IXTQ 69N30P
IXTT 69N30P
N-Channel Enhancement Mode
V
DSS
ID25
RDS(on)
www.DataSheet4U.com
= 300 V
= 69 A
= 49 mΩ
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
T
J
TJM
Tstg
TL
M
d
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-3P)
TO-3P
TO-268
TO-3P (IXTQ)
Maximum Ratings
300 V
300 V
±20 V
±30 V G
69 A
DS
200 A
69 A
50 mJ TO-268 (IXTT)
1.5 J
(TAB)
10 V/ns
500
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
5.5 g
5.0 g
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
! International standard packages
! Unclamped Inductive Switching (UIS)
rated
! Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
V
DSS
V
GS
=
0
V,
I
D
=
250
µA
Characteristic Values
Min. Typ. Max.
300 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
I
DSS
V =V
DS DSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
49 mΩ
Advantages
! Easy to mount
! Space savings
! High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
© 204 IXYS All rights reserved
DS99078A(04/04)
1 page  
1.00
0.10
0.01
1
Fig. 13. Maxim um Transient Therm al Resistance
IXTQ 69N30P
IXTT 69N30P
www.DataSheet4U.com
10 100
Pulse Width - milliseconds
1000
© 204 IXYS All rights reserved
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| PDF Descargar | [ Datasheet IXTQ69N30P.PDF ] | |
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