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IXTT69N30P の電気的特性と機能

IXTT69N30PのメーカーはIXYS Corporationです、この部品の機能は「PolarHT Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTT69N30P
部品説明 PolarHT Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXTT69N30P Datasheet, IXTT69N30P PDF,ピン配置, 機能
PolarHTTM
Power MOSFET
IXTQ 69N30P
IXTT 69N30P
N-Channel Enhancement Mode
V
DSS
ID25
RDS(on)
www.DataSheet4U.com
= 300 V
= 69 A
= 49 m
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
T
J
TJM
Tstg
TL
M
d
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-3P)
TO-3P
TO-268
TO-3P (IXTQ)
Maximum Ratings
300 V
300 V
±20 V
±30 V G
69 A
DS
200 A
69 A
50 mJ TO-268 (IXTT)
1.5 J
(TAB)
10 V/ns
500
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
5.5 g
5.0 g
G
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
! International standard packages
! Unclamped Inductive Switching (UIS)
rated
! Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
V
DSS
V
GS
=
0
V,
I
D
=
250
µA
Characteristic Values
Min. Typ. Max.
300 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
I
DSS
V =V
DS DSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
49 m
Advantages
! Easy to mount
! Space savings
! High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
© 204 IXYS All rights reserved
DS99078A(04/04)

1 Page





IXTT69N30P pdf, ピン配列
Fig. 1. Output Characte ris tics
@ 25 De g. C
70
VGS = 10V
60 8V
7V
50
40
30
6V
20
10
0
0
70
60
50
5V
0.5 1 1.5 2 2.5 3 3.5
VD S - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
VGS = 10V
8V
7V
4
40
6V
30
20
5V
10
0
01 23 456 78
VD S - Volts
Fig. 5. RDS(on) Norm alized to ID25
Value vs. ID
3.8
3.4 VGS = 10V
3
2.6
2.2 TJ = 125ºC
1.8
1.4
1 TJ = 25ºC
0.6
0
20 40 60 80 100 120 140 160 180
I D - Amperes
© 204 IXYS All rights reserved
IXTQ 69N30P
IXTT 69N30P
www.DataSheet4U.com
Fig. 2. Extende d Output Characteris tics
@ 25 deg. C
180
160
VGS = 10V
9V
140 8V
120
100
7V
80
60
6V
40
20
5V
0
0 2 4 6 8 10 12 14 16 18 20
VD S - Volts
Fig. 4. RDS(on) Norm alized to ID25 Value vs .
Junction Tem perature
3
2.8 VGS = 10V
2.6
2.4
2.2
2
1.8 ID = 69A
1.6 ID = 34.5A
1.4
1.2
1
0.8
0.6
0.4
-50 -25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Curre nt vs. Case
Te m pe rature
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade


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部品番号部品説明メーカ
IXTT69N30P

PolarHT Power MOSFET

IXYS Corporation
IXYS Corporation


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