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IXTT64N25P の電気的特性と機能

IXTT64N25PのメーカーはIXYS Corporationです、この部品の機能は「PolarHT Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTT64N25P
部品説明 PolarHT Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXTT64N25P Datasheet, IXTT64N25P PDF,ピン配置, 機能
PolarHTTM
Power MOSFET
IXTQ 64N25P
IXTT 64N25P
N-Channel Enhancement Mode
Preliminary Data Sheet
VDSS
ID25
RDS(on)
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= 250 V
= 64 A
= 48 m
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 4
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (TO-3P)
TO-3P
TO-268
Maximum Ratings
TO-3P (IXTQ)
250 V
250 V
±20 V
64 A G
160 A
DS
60 A
40 mJ
1.0 J TO-268 (IXTT)
(TAB)
10 V/ns
400 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
5.5 g
5.0 g
GS
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
250 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
48 m
Advantages
z Easy to mount
z Space savings
z High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
© 2004 IXYS All rights reserved
DS99120A(02/04)

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IXTT64N25P pdf, ピン配列
64
56
48
40
32
24
16
8
0
0
64
56
48
40
32
24
16
8
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
9V
8V
7V
6V
5V
0.5 1 1.5 2 2.5 3 3.5
VD S - Volts
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
9V
8V
7V
6V
5V
1234567
VD S - Volts
4
8
Fig. 5. RDS(on) Norm alize d to
0.5 ID25 Value vs. ID
3.7
3.4 VGS = 10V
3.1
TJ = 125ºC
2.8
2.5
2.2
1.9
1.6
1.3 TJ = 25ºC
1
0.7
0
30 60 90 120 150
I D - Amperes
180
© 2004 IXYS All rights reserved
IXTQ 64N25P
IXTT 64N25P
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Fig. 2. Extended Output Characteristics
@ 25ºC
180
160
VGS = 10V
9V
140
120
100 8V
80
7V
60
40 6V
20
5V
0
0 2 4 6 8 10 12 14 16 18 20
VD S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Te m perature
2.8
2.5 VGS = 10V
2.2
1.9
ID = 64A
1.6
1.3 ID = 32A
1
0.7
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Curre nt vs . Cas e
Tem pe rature
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade


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部品番号部品説明メーカ
IXTT64N25P

PolarHT Power MOSFET

IXYS Corporation
IXYS Corporation


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