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STI11NM60ND の電気的特性と機能

STI11NM60NDのメーカーはSTMicroelectronicsです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 STI11NM60ND
部品説明 Power MOSFET ( Transistor )
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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STI11NM60ND Datasheet, STI11NM60ND PDF,ピン配置, 機能
STD11NM60ND, STF/I11NM60ND
STP11NM60ND, STU11NM60ND
N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET
I2PAK, TO-220, TO-220FP, IPAK, DPAK
Features
Order codes VDSS (@Tjmax) RDS(on) max ID
STD11NM60ND
STF11NM60ND
STI11NM60ND
STP11NM60ND
STU11NM60ND
650 V
< 0.45 Ω
10 A
10 A(1)
10 A
10 A
10 A
1. Limited only by maximum temperature allowed
The worldwide best RDS(on)* area amongst the
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
Description
The device is an N-channel FDmesh™ II Power
MOSFET that belongs to the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company's strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1. Device summary
Order codes
Marking
STD11NM60ND
STF11NM60ND
STI11NM60ND
STP11NM60ND
STU11NM60ND
11NM60ND
3
1
DPAK
3
2
1
TO-220
IPAK
3
2
1
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Package
DPAK
TO-220FP
I2PAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
Tube
Tube
October 2010
Doc ID 14625 Rev 2
1/19
www.st.com
19

1 Page





STI11NM60ND pdf, ピン配列
STD/F/I/P/U11NM60ND
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
DPAK/I²PAK,
TO-220/IPAK
TO-220FP
VDS Drain-source voltage (VGS=0)
600
VGS Gate-source voltage
± 25
ID Drain current (continuous) at TC = 25°C
10 10 (1)
ID Drain current (continuous) at TC = 100°C
6.3 6.3(1)
IDM (2) Drain current (pulsed)
40 40 (1)
PTOT Total dissipation at TC = 25°C
90 25
dv/dt (3) Peak diode recovery voltage slope
40
VISO
Tstg
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
Storage temperature
2500
-55 to 150
Tj Max. operating junction temperature
150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 10 A, di/dt 400 A/µs, VDD = 80% V(BR)DSS, peak VDS V(BR)DSS
Unit
V
V
A
A
A
W
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-220 I²PAK DPAK IPAK TO-220FP
Rthj-case
Thermal resistance junction-case
max
Rthj-amb Thermal resistance junction-amb max
Rthj-pcb(1) Thermal resistance junction-pcb max
Tl
Maximum lead temperature for
soldering purposes
1.38 5 °C/W
62.5 100 62.5 °C/W
50 °C/W
300 300 °C
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Doc ID 14625 Rev 2
3/19


3Pages


STI11NM60ND 電子部品, 半導体
Electrical characteristics
STD/F/I/P/U11NM60ND
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
Min Typ Max Unit
16 ns
7 ns
--
50 ns
9 ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ Max Unit
ISD
ISDM (1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 10 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =10 A, di/dt =100 A/µs,
VDD = 100 V
(see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100 V
di/dt =100 A/µs, ISD = 10 A
Tj = 150 °C (see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
-
-
-
-
10
40
1.3
130
0.69
11
200
1.2
12
A
A
V
ns
µC
A
ns
µC
A
6/19 Doc ID 14625 Rev 2

6 Page



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部品番号部品説明メーカ
STI11NM60ND

Power MOSFET ( Transistor )

STMicroelectronics
STMicroelectronics


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