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FDS5672のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel PowerTrench MOSFET」です。 |
部品番号 | FDS5672 |
| |
部品説明 | N-Channel PowerTrench MOSFET | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとFDS5672ダウンロード(pdfファイル)リンクがあります。 Total 12 pages
www.DataSheet4U.com
July 2005
FDS5672
N-Channel PowerTrench® MOSFET
60V, 12A, 10mΩ
Features
rDS(ON) = 10mΩ, VGS = 10V, ID = 12A
rDS(ON) = 14mΩ, VGS = 6V, ID = 10A
High performance trench technology for extremely low
rDS(ON)
Low gate charge
High power and current handling capability
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
DC/DC converters
Branding Dash
1
2
3
4
SO-8
5
54
63
72
81
©2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A
1
www.fairchildsemi.com
1 Page www.DataSheet4U.com
Resistive Switching Characteristics (VGS = 10V)
tON Turn-On Time
td(ON)
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
VDD = 30V, ID = 12A
VGS = 10V, RGS = 9.1Ω
tf Fall Time
tOFF Turn-Off Time
- - 50 ns
- 13 - ns
- 20 - ns
- 35 - ns
- 14 - ns
- - 64 ns
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr Reverse Recovery Time
QRR Reverse Recovered Charge
ISD = 12A
ISD = 6A
ISD=12A, dISD/dt = 100A/µs
ISD=12A, dISD/dt = 100A/µs
-
-
-
-
- 1.25 V
- 1.0 V
- 39 ns
- 40 nC
Notes:
1: Starting TJ = 25°C, L = 1mH, IAS = 22A, VDD = 60V, VGS = 10V.
2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
3:
drain
RθJA
ipsinmse. aRsuθJreCdiswgituha1ra.0ntiene2dcobpypdeersoignnFwRh-4ilebRoaθJrdA.
is
determined
by
the
user’s
board
design.
©2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A
3
www.fairchildsemi.com
3Pages Typical Characteristics TC = 25°C unless otherwise noted
www.DataSheet4U.com
1.2
VGS = VDS, ID = 250µA
1.1
1.0
0.9
0.8
0.7
0.6
-80
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
1.10
ID = 250µA
1.05
1.00
0.95
0.90
-80
-40 0
40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
6000
CISS = CGS + CGD
1000
COSS ≅ CDS + CGD
CRSS = CGD
10
VDD = 50V
8
6
4
100
VGS = 0V, f = 1MHz
40
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
Figure 13. Capacitance vs Drain to Source
Voltage
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 12A
ID = 1A
5 10 15 20 25 30 35
Qg, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
©2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A
6
www.fairchildsemi.com
6 Page | |||
ページ | 合計 : 12 ページ | ||
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PDF ダウンロード | [ FDS5672 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
FDS5670 | 60V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDS5672 | N-Channel PowerTrench MOSFET | Fairchild Semiconductor |