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IRH9250 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRH9250
部品説明 TRANSISTOR P-CHANNEL
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRH9250 Datasheet, IRH9250 PDF,ピン配置, 機能
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Provisional Data Sheet No. PD-9.1392
www.DataSheet4U.com
AVALANCHE ENERGY AND dv/dt RATED
HEXFET® TRANSISTOR
IRH9250
P-CHANNEL
RAD HARD
-200 Volt, 0.315, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 105 Rads (Si). Under identical pre- and post-
radiation test conditions, International Rectifier’s P-Channel
RAD HARD HEXFETs retainidentical electrical specifications
up to 1 x 105 Rads (Si) total dose. No compensation in gate
drive circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x 1012
Rads (Si)/Sec, and return to normal operation within a few
microseconds. Single Event Effect (SEE) testing of
International Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the P-
Channel RAD HARD process utilizes International Rectifier’s
patented HEXFET technology, the user can expect the
highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inver ters, choppers, audio
amplifiers and high-energy pulse circuits in space and
weapons environments.
Product Summary
Part Number
BVDSS
IRH9250
-200V
RDS(on)
0.315
ID
-14A
Features:
n Radiation Hardened up to 1 x 105 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Ceramic Eyelets
Absolute Maximum Ratings
Pre-Radiation
Parameter
IRH9250
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current 
-14
-9 A
-56
PD @ TC = 25°C
Max. Power Dissipation
150 W
Linear Derating Factor
1.2 W/K …
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current 
±20
500
-14
V
mJ
A
EAR
Repetitive Avalanche Energy 
15
mJ
dv/dt
Peak Diode Recovery dv/dt ƒ
-5.5 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
oC
Lead Temperature
300 (0.063 in. (1 .6mm) from case for 10s)
Weight
11.5 (typical)
g
Notes: See page 4
To Order

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