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PDF IRH9230 Data sheet ( Hoja de datos )
| Número de pieza | IRH9230 | |
| Descripción | TRANSISTOR P-CHANNEL | |
| Fabricantes | International Rectifier | |
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Provisional Data Sheet No. PD-9.1391
www.DataSheet4U.com
AVALANCHE ENERGY AND dv/dt RATED
HEXFET® TRANSISTOR
IRH9230
P-CHANNEL
RAD HARD
-200 Volt, 0.8Ω, RAD HARD HEXFET
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 105 Rads (Si). Under identical pre- and post-radiation
test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in gate
drive circuitry is required. These devices are also capable of
surviving transient ionization pulses as high as 1 x 1012 Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Single Event Effect (SEE) testing of
International Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the P-
Channel RAD HARD process utilizes International Rectifier’s
patented HEXFET technology, the user can expect the
highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers
and high-energy pulse circuits in space and weapons
environments.
Product Summary
Part Number
BVDSS
IRH9230
-200V
RDS(on)
0.8Ω
ID
-6.5A
Features:
n Radiation Hardened up to 1 x 105 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
Pre-Radiation
Parameter
IRH9230
Units
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Notes: See page 4
Continuous Drain Current
-6.5
Continuous Drain Current
Pulsed Drain Current
-4.1
-26
Max. Power Dissipation
75
Linear Derating Factor
0.2
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
±20
330
-6.5
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
7.5
-5.0
-55 to 150
Storage Temperature Range
Lead Temperature
Weight
300 (0.063 in. (1 .6mm) from case for 10s)
11.5 (typical)
To Order
A
W
W/K
V
mJ
A
mJ
V/ns
oC
g
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