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PDF IRH9130 Data sheet ( Hoja de datos )
| Número de pieza | IRH9130 | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
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PD - 90880C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204AA)
Product Summary
Part Number Radiation Level RDS(on)
IRH9130
100K Rads (Si) 0.3Ω
IRH93130
300K Rads (Si) 0.3Ω
ID
-11A
-11A
IRH9130
100V, P-CHANNEL
RADHard™ HEXFET®TECHNOLOGY
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-204AA
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-11
-7.0 A
-44
75 W
0.6 W/°C
VGS
Gate-to-Source Voltage
±20 V
EAS Single Pulse Avalanche Energy ➁
190
mJ
IAR Avalanche Current ➀
-11 A
EAR
Repetitive Avalanche Energy ➀
7.5 mJ
dv/dt
Peak Diode Recovery dv/dt ➂
-10 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
oC
Weight
11.5 (Typical )
g
For footnotes refer to the last page
www.irf.com
1
02/18/03
1 page  
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Pre-Irradiation
IRH9130
2000
1600
1200
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
800
400
0
1
Coss
Crss
10
-VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -11A
16
VDS = 80V
VDS = 50V
VDS = 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50 60
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150° C
10
TJ = 25° C
1
0.1
0.0
VGS = 0 V
1.0 2.0 3.0 4.0
-VSD ,Source-to-Drain Voltage (V)
5.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100us
10
1ms
TC = 25°C
TJ = 150 °C
Single Pulse
1
1 10
10ms
100
-VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRH9130.PDF ] | |
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