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IS64WV51216BLL の電気的特性と機能

IS64WV51216BLLのメーカーはIntegrated Silicon Solutionです、この部品の機能は「512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS64WV51216BLL
部品説明 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
メーカ Integrated Silicon Solution
ロゴ Integrated Silicon Solution ロゴ 




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IS64WV51216BLL Datasheet, IS64WV51216BLL PDF,ピン配置, 機能
IS61WV51216ALL
IS61WV51216BLL
IS64WV51216BLL
www.DataSheet4U.com
512K x 16 HIGH-SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
OCTOBER 2009
FEATURES
• High-speed access times:
8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater
noise immunity
• Easy memory expansion with CE and OE op-
tions
CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single power supply
VDD 1.65V to 2.2V (IS61WV51216ALL)
speed = 20ns for VDD 1.65V to 2.2V
VDD 2.4V to 3.6V (IS61/64WV51216BLL)
speed = 10ns for VDD 2.4V to 3.6V
speed = 8ns for VDD 3.3V + 5%
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 44-pin TSOP (Type II)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS61WV51216ALL/BLL and IS64WV51216BLL
are high-speed, 8M-bit static RAMs organized as 512K
words by 16 bits. It is fabricated using ISSI's high-perform-
ance CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high-perfor-
mance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The device is packaged in the JEDEC standard 44-pin
TSOP Type II and 48-pin Mini BGA (9mm x 11mm).
A0-A18
DECODER
512K x 16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. F
10/01/09
1

1 Page





IS64WV51216BLL pdf, ピン配列
IS61WV51216ALL
IS61WV51216BLL
IS64WV51216BLL
PIN CONFIGURATIONS
44-Pin TSOP (Type II)
A0 1
A1 2
A2 3
A3 4
A4 5
CE 6
I/O0 7
I/O1 8
I/O2 9
I/O3 10
VDD 11
GND 12
I/O4 13
I/O5 14
I/O6 15
I/O7 16
WE 17
A5 18
A6 19
A7 20
A8 21
A9 22
44 A17
43 A16
42 A15
41 OE
40 UB
39 LB
38 I/O15
37 I/O14
36 I/O13
35 I/O12
34 GND
33 VDD
32 I/O11
31 I/O10
30 I/O9
29 I/O8
28 A18
27 A14
26 A13
25 A12
24 A11
23 A10
PIN DESCRIPTIONS
A0-A18
I/O0-I/O15
CE
OE
WE
LB
UB
NC
VDD
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
Integrated Silicon Solution, Inc. — www.issi.com
Rev. F
10/01/09
www.DataSheet4U.com
3


3Pages


IS64WV51216BLL 電子部品, 半導体
IS61WV51216ALL
IS61WV51216BLL
IS64WV51216BLL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 3.3V + 5%
Symbol Parameter
Test Conditions
VOH Output HIGH Voltage
VDD = Min., IOH = –4.0 mA
VOL Output LOW Voltage
VDD = Min., IOL = 8.0 mA
VIH Input HIGH Voltage
VIL Input LOW Voltage(1)
ILI Input Leakage
GND VIN VDD
ILO Output Leakage
GND VOUT VDD, Outputs Disabled
Note:
1. VIL(min.)=–0.3VDC;VIL(min.)=–2.0VAC(pulsewidth<10ns).Not100%tested.
VIH(max.)=VDD+0.3VDC;VIH(max.)=VDD+2.0VAC(pulsewidth<10 ns).Not100%tested.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 2.4V-3.6V
Symbol Parameter
Test Conditions
VOH Output HIGH Voltage
VDD = Min., IOH = –1.0 mA
VOL Output LOW Voltage
VDD = Min., IOL = 1.0 mA
VIH Input HIGH Voltage
VIL Input LOW Voltage(1)
ILI Input Leakage
GND VIN VDD
ILO Output Leakage
GND VOUT VDD, Outputs Disabled
Note:
1. VIL(min.)=–0.3VDC;VIL(min.)=–2.0VAC(pulsewidth<10 ns).Not100%tested.
VIH(max.)=VDD+0.3VDC;VIH(max.)=VDD+2.0VAC(pulsewidth<10 ns).Not100%tested.
www.DataSheet4U.com
Min.
2.4
2
–0.3
–1
–1
Max.
0.4
VDD + 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
Min.
1.8
2.0
–0.3
–1
–1
Max.
0.4
VDD + 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 1.65V-2.2V
Symbol Parameter
Test Conditions
VDD
VOH
Output HIGH Voltage
IOH = -0.1 mA
1.65-2.2V
VOL
Output LOW Voltage
IOL = 0.1 mA
1.65-2.2V
VIH Input HIGH Voltage
1.65-2.2V
VIL(1)
Input LOW Voltage
1.65-2.2V
ILI Input Leakage
GND VIN VDD
ILO Output Leakage
GND VOUT VDD, Outputs Disabled
Notes:
1. VIL(min.)= –0.3VDC; VIL(min.)= –2.0VAC(pulsewidth<10ns).Not100%tested.
VIH(max.)= VDD+0.3VDC;VIH(max.)= VDD+2.0VAC(pulsewidth<10ns).Not100%tested.
Min.
1.4
1.4
–0.2
–1
–1
Max.
0.2
VDD + 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
6 Integrated Silicon Solution, Inc. — www.issi.com
Rev. F
10/01/09

6 Page



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部品番号部品説明メーカ
IS64WV51216BLL

512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Integrated Silicon Solution
Integrated Silicon Solution


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