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PDF STL35NF3LL Data sheet ( Hoja de datos )
| Número de pieza | STL35NF3LL | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL35NF3LL
N-CHANNEL 30V - 0.0055Ω - 35A PowerFLAT™
LOW GATE CHARGE STripFET™ MOSFET
TARGET DATA
TYPE
VDSS
RDS(on)
ID
STL35NF3LL
30 V < 0.007 Ω 35 A
s TYPICAL RDS(on) = 0.0055Ω
s IMPROVED DIE-TO-FOOTPRINT RATIO
s VERY LOW PROFILE PACKAGE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique “STripFET™” technolo-
gy. The resulting transistor shows extremely low on-
resistance and minimal gate charge. The new Pow-
erFLAT™ package allows a significant reduction in
board space without compromising performance.
PowerFLAT™(6x5)
(Chip Scale Package)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC CONVERTERS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID(#)
IDM (q)
PTOT
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
(#) Limited by Wire Bonding
October 2001
Value
30
30
± 15
35
22
140
80
0.64
TBD
TBD
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
–55 to 150
°C
(1)ISD<35A, di/dt<300A/µs, VDD<V(BR)DSS, TJ<TJMAX
(2) Starting Tj = 25°C, ID = 30A, VDD = 27.5V
1/6
1 page  
DIM.
A
A1
b
D
D2
E
E2
e
L
MIN.
0.80
0.36
3.95
2.95
0.65
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STL35NF3LL
PowerFLAT™(6x5) MECHANICAL DATA
mm.
TYP
0.08
4.89
6.00
1.27
MAX.
1.00
0.48
4.05
3.05
0.85
MIN.
0.031
0.014
0.154
0.115
0.025
inch
TYP.
0.003
0.191
0.235
0.049
MAX.
0.039
0.018
0.158
0.119
0.033
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet STL35NF3LL.PDF ] | |
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